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23 June 2014 Layer structure and material properties of an epitaxially grown InGaAs PIN photo-detector on an InP substrate
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Proceedings Volume 9257, Sensors, MEMS and Electro-Optical Systems; 925704 (2014)
Event: Third Conference on Sensors, MEMS and Electro-Optic Systems, 2014, Skukuza, Kruger National Park, South Africa
This work aims to provide an analysis on the material properties, layer geometries, design, and fabrication of a singleelement, direct band gap indium gallium arsenide (InxGa1-xAs) infrared photo-detector on a lattice matched indium phosphide (InP) substrate with cut-off wavelength of 1700 nm. A theoretical study on the mechanisms present during device operation allows accurate modelling and simulation on the intrinsic behaviour and transport physics to provide reasoning behind material type, carrier concentrations and doping profiles, and the proposed physical dimensions. The estimated device performance based on the responsivity and quantum efficiency, dark current, bandwidth, and intrinsic junction capacitance is also presented. Device optimization through silicon nitride (SiNx) anti-reflection and silicon dioxide (SiO2) passivation layer combinations is investigated based on light reflection and diffraction minimization. Finally, an equivalent electrical circuit representation of the dominant noise sources in light and dark conditions aims to provide additional insight into device optimization.
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J. W. Lambrechts "Layer structure and material properties of an epitaxially grown InGaAs PIN photo-detector on an InP substrate", Proc. SPIE 9257, Sensors, MEMS and Electro-Optical Systems, 925704 (23 June 2014);

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