Properties of InGaN P-I-N ultraviolet detector

Yidan Lu; Yan Zhang; Xiang-yang Li

doi:10.1117/12.2073317

2 September 2014 Properties of InGaN P-I-N ultraviolet detector

Yidan Lu, Yan Zhang, Xiang-yang Li

Proceedings Volume 9284, 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronics Materials and Devices for Sensing and Imaging; 92840P (2014) https://doi.org/10.1117/12.2073317
Event: 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT 2014), 2014, Harbin, China

Abstract

The fabrication and characterization of InGaN ultraviolet photodetector were reported in this work. The effects of thermal annealing were investigated on the properties of ohmic contact. Experiments showed that the zero bias resistance was lowest when the sample was annealed at 550 degrees Celsius for 5 minutes. The current-voltage (I-V) curve showed that current at zero bias was 3.70×10^-13A and the resistance was 4.53×10¹⁰ Ω. A flat band spectral response was achieved in the 360nm~390nm. The detector displayed an unbiased response of 0.22A/W at 378 nm, corresponding to an internal quantum efficiency of 88%. R₀A values up to 1.3×10⁸Ω·cm² was obtained corresponding to D^*=1.97×10¹³cm•Hz^1/2•W^-1.

Citation Download Citation

Yidan Lu, Yan Zhang, and Xiang-yang Li "Properties of InGaN P-I-N ultraviolet detector", Proc. SPIE 9284, 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronics Materials and Devices for Sensing and Imaging, 92840P (2 September 2014); https://doi.org/10.1117/12.2073317

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