The InGaAs devices has been chosen as new candidate of solid-state low-light devices because of advantages such
as wide response wavelength, high quantum efficiency, high device performance, digitalized readout, high
temperature operation, high reliability and long lifetime. It has gained vital development and application in the
world. 320×256 InGaAs solid-state low-light devices has been prepared and studied, the p-i-n material structure
was grown by MOCVD system. The mesa device structure was chosen and fabricated by inductively coupled
plasma (ICP) method. The detector chip and CMOS readout integrated circuit was bonded by flip-chip bonding.
The FPAs was packaged to Dewar which temperature could be changed by temperature controller. Both
performances of single element device and focal plane arrays were studied in detail. Very simple optics lens was
adopted to show the imaging of 1.064μm laser spot and hand. Study results disclose feasible material growth,
devices processing and high temperature operation characteristics of InGaAs devices.
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