The effect of electrode process on properties of HgCdTe detectors

Nili Wang; Xiang-yang Liu; Tian-yi Lan; Shi-jia Liu; Shui-ping Zhao; Qing Zhou; Xiangyang Li

doi:10.1117/12.2072462

20 November 2014 The effect of electrode process on properties of HgCdTe detectors

Nili Wang, Xiang-yang Liu, Tian-yi Lan, Shi-jia Liu, Shui-ping Zhao, Qing Zhou, Xiangyang Li

Proceedings Volume 9300, International Symposium on Optoelectronic Technology and Application 2014: Infrared Technology and Applications; 93001Q (2014) https://doi.org/10.1117/12.2072462
Event: International Symposium on Optoelectronic Technology and Application 2014, 2014, Beijing, China

Abstract

Performance of HgCdTe devices was limited by many factors such as materials and techniques, etc. And the electrical characteristics of electrode contacts on HgCdTe played important roles．Because Ar Ion Beam Etching could make the conductivity type conversion of p-type HgCdTe material, it was used to obtain n-type electrode area on the slight-p type HgCdTe material. Variable magnetic field Hall measurements were performed on n-type and slight p-type HgCdTe material before and after Ar Ion Beam Etching at 77 K. The mobility spectrum analysis (MSA) technique was employed in this paper to obtain the electrical parameter of HgCdTe. Comparing the electrical parameters of HgCdTe before and after etching, we knew that Ar Ion etching formed high doping concentration n-type area on slight p-type HgCdTe. The minority carrier lifetime of HgCdTe was studied using the photoconductive decay technique. By measuring the minority carrier lifetime of the same HgCdTe material with or without n-type electrode, it was found that the minority carrier lifetime of slight p-type HgCdTe with n-type electrode was higher than HgCdTe that was without n-type electrode at low temperature. The results showed that the n-type electrode could improve the minority carrier lifetime of slight p-type HgCdTe. In addition, by changing the distance of the n-type electrode area to the photosensitive area, it was researched that the impact of n-type electrode area on the device performance. With the decrease of distance, the device performance improved. It was proved that n-type electrode areas also could improve the performance by device fabrication.

Citation Download Citation

Nili Wang, Xiang-yang Liu, Tian-yi Lan, Shi-jia Liu, Shui-ping Zhao, Qing Zhou, and Xiangyang Li "The effect of electrode process on properties of HgCdTe detectors", Proc. SPIE 9300, International Symposium on Optoelectronic Technology and Application 2014: Infrared Technology and Applications, 93001Q (20 November 2014); https://doi.org/10.1117/12.2072462

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
6 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Mercury cadmium telluride

Electrodes

Etching

Argon

Ions

Ion beams

Sensors

Show All Keywords

Keywords/Phrases

Search In:

Publication Years