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4 March 2015 Silicon wafer microstructure imaging using InfraRed Transport of Intensity Equation
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Proceedings Volume 9302, International Conference on Experimental Mechanics 2014; 93023I (2015) https://doi.org/10.1117/12.2078579
Event: International Conference on Experimental Mechanics 2014, 2014, Singapore, Singapore
Abstract
A novel quantitative 3D imaging system of silicon microstructures using InfraRed Transport of Intensity Equation (IRTIE) is proposed in this paper. By recording the intensity at multiple planes and using FFT or DCT based TIE solver, fast and accurate phase retrieval for both uniform and non-uniform intensity distributions is proposed. Numerical simulation and experiments confirm the accuracy and reliability of the proposed method. The application of IR-TIE for inspection of micro-patterns in visibly opaque media using 1310 nm light source is demonstrated. For comparison, micro-patterns are also inspected by the contact scanning mode Taylor Hobson system. Quantitative agreement suggests the possibility of using IR-TIE for phase imaging of silicon wafers.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hongru Li, Guoying Feng, Thomas Bourgade, Chao Zuo, Yongzhao Du, Shouhuan Zhou, and Anand Asundi "Silicon wafer microstructure imaging using InfraRed Transport of Intensity Equation", Proc. SPIE 9302, International Conference on Experimental Mechanics 2014, 93023I (4 March 2015); https://doi.org/10.1117/12.2078579
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