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16 August 1988 Thinned Backside Illuminated CCDs For Ultraviolet Imaging
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Abstract
This paper presents the first results obtained at Thomson-CSF on thinned CCDs (576 x 384 pixels) developed for ultraviolet imaging. The process involves chemical thinning of the CCD down to about 10 microns, followed by a shallow implantation (p+ for backside accumulation) activated by laser annealing. UV quantum efficiencies as high as 20 % are measured at 2540 A despite an absorption length in silicon of 55 A at this wavelength. Measurements under 5.9 keV (Fe55) X-ray irradiation have shown 295 eV FWHM energy resolution. After optimization of various parameters in the backside treatment, this technology will in course be applied to several sensors : 1024 x 1024 and buttable devices.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. Tassin, Y. Thenoz, and J. Chabbal "Thinned Backside Illuminated CCDs For Ultraviolet Imaging", Proc. SPIE 0932, Ultraviolet Technology II, (16 August 1988); https://doi.org/10.1117/12.946905
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