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11 March 2015 Semiconductor defect metrology using laser-based quantitative phase imaging
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Proceedings Volume 9336, Quantitative Phase Imaging; 93361I (2015) https://doi.org/10.1117/12.2078329
Event: SPIE BiOS, 2015, San Francisco, California, United States
Abstract
A highly sensitive laser-based quantitative phase imaging tool, using an epi-illumination diffraction phase microscope, has been developed for silicon wafer defect inspection. The first system used a 532 nm solid-state laser and detected 20 nm by 100 nm by 110 nm defects in a 22 nm node patterned silicon wafer. The second system, using a 405 nm diode laser, is more sensitive and has enabled detection of 15 nm by 90 nm by 35 nm defects in a 9 nm node densely patterned silicon wafer. In addition to imaging, wafer scanning and image-post processing are also crucial for defect detection.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Renjie Zhou, Chris Edwards, Gabriel Popescu, and Lynford Goddard "Semiconductor defect metrology using laser-based quantitative phase imaging", Proc. SPIE 9336, Quantitative Phase Imaging, 93361I (11 March 2015); https://doi.org/10.1117/12.2078329
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