High performance light trapping structures for Si-based photoelectronics fabricated by hybrid picosecond laser irradiation and chemical corrosion

Lingfei Ji; Xiaozhan Lv; Yan Wu; Zhenyuan Lin; Yijian Jiang

doi:10.1117/12.2077959

12 March 2015 High performance light trapping structures for Si-based photoelectronics fabricated by hybrid picosecond laser irradiation and chemical corrosion

Lingfei Ji, Xiaozhan Lv, Yan Wu, Zhenyuan Lin, Yijian Jiang

Author Affiliations +

Proceedings Volume 9351, Laser-based Micro- and Nanoprocessing IX; 93511R (2015) https://doi.org/10.1117/12.2077959
Event: SPIE LASE, 2015, San Francisco, California, United States

Abstract

We propose the fabrication of two types high performance texturized antireflective structures on crystalline (100) silicon (c-Si) surface by hybrid picosecond laser scanning irradiation followed by chemical corrosion. The design and the fabrication with high controllable performance were studied. The hybrid method includes 1064 nm picosecond (ps) laser scanning to form micro-hole array and subsequently short-time alkaline corrosion. After ps laser processing, there is little reconsolidation and heat affect zone on the silicon surface, which is beneficial to achieve the precise chemical corrosion effect. Depending on the laser scanning intervals, scanning times and chemical corrosion time, a variety of surface texture morphologies, even a special micro-nano hierarchical structure in which finer nano-structures formed in the micro units of the texture, were achieved. Observing with SEM, the average diameter of the micro-holes in the micro-nano hierarchica is 25~30 μm, while the average size of the nano-level ladder-like structures on the micro-hole wall is from dozens to hundreds of nanometers. Comparing to the traditional laser texturing techniques for c-Si solar cell, the whole laser processing was carried out in an open air ambient without using etch mask and SF₆/O₂ plasma. The results show the reflectance value of the fabricated c-Si surfaces can reach as low as 6% (400 nm~1000 nm). This is a potential method for economical antireflective structures fabrication which is ideal for using in the high-efficiency silicon-based photoelectronic devices.

Citation Download Citation

Lingfei Ji, Xiaozhan Lv, Yan Wu, Zhenyuan Lin, and Yijian Jiang "High performance light trapping structures for Si-based photoelectronics fabricated by hybrid picosecond laser irradiation and chemical corrosion", Proc. SPIE 9351, Laser-based Micro- and Nanoprocessing IX, 93511R (12 March 2015); https://doi.org/10.1117/12.2077959

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
10 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Corrosion

Reflectivity

Picosecond phenomena

Silicon

Semiconductor lasers

Laser scanners

Scanning electron microscopy

Show All Keywords

Keywords/Phrases

Search In:

Publication Years