Translator Disclaimer
Paper
16 March 2015 Suppression of thermal carrier escape and enhanced two-step photon absorption in quantum-dot intermediate-band solar cells with a high-potential barrier
Author Affiliations +
Abstract
We have studied detailed carrier generation process in the two-step photon absorption and influence of thermal carrier escape in quantum-dot intermediate-band solar cells (QD-IBSC). The photocurrent created by the two-step photon absorption shows saturation as the inter-band excitation intensity becomes strong, and the inter-band excitation intensity showing the saturation behavior strongly depends on the inter-subband excitation intensity. To interpret this phenomenon, we carried out a theoretical simulation based on carrier dynamics considering carrier generation, energy relaxation and thermal carrier escape. The results indicate that the photocurrent saturation is caused by filling the intermediate states. The shift of the saturation point depending on the inter-subband excitation intensity is caused by the shift of the quasi-Fermi level for the intermediate states.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Asahi, H. Teranishi, N. Kasamatsu, T. Kada, Toshiyuki Kaizu, and T. Kita "Suppression of thermal carrier escape and enhanced two-step photon absorption in quantum-dot intermediate-band solar cells with a high-potential barrier", Proc. SPIE 9358, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IV, 93580X (16 March 2015); https://doi.org/10.1117/12.2081302
PROCEEDINGS
7 PAGES


SHARE
Advertisement
Advertisement
Back to Top