High excitation photoluminescence effects as a probing tool for the growth of Cu(In,Ga)Se2

Matthieu Moret; Olivier Briot; Bernard Gil; Thomas Lepetit; Ludovic Arzel; Nicolas Barreau

doi:10.1117/12.2076938

16 March 2015 High excitation photoluminescence effects as a probing tool for the growth of Cu(In,Ga)Se₂

Matthieu Moret, Olivier Briot, Bernard Gil, Thomas Lepetit, Ludovic Arzel, Nicolas Barreau

Proceedings Volume 9358, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IV; 93581A (2015) https://doi.org/10.1117/12.2076938
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

Copper Indium Gallium deSelenide (Cu(In,Ga)Se₂, CIGS) is a promising material for cost-efficient solar cells. Efficiencies above 20% have already been demonstrated in laboratory, and large area CIGS solar panels are already on the market. However, it is still an interesting issue to find efficient characterization techniques that can be used to validate the quality of the different layers at any step of the process, without having to process a complete cell and measure its electrical properties. In this work, we have deposited CIGS onto Mo coated soda lime glass by co-evaporation, using the so-called three step deposition process. Then, photoluminescence (PL) measurements were made on the samples, in the range of 10K to the room temperature, and the excitation intensity was varied in a very large range, in order to reach non-linear regime. We report the first observation of stimulated emission in mechanisms are discussed. The threshold at which sample photoluminescence changes from spontaneous to stimulated is well known to be sensitive to overall sample quality, and we propose to use this measurement as a probing tool for sample quality. This opens an interesting perspective for characterization of CIGS during solar cell processing.

Citation Download Citation

Matthieu Moret, Olivier Briot, Bernard Gil, Thomas Lepetit, Ludovic Arzel, and Nicolas Barreau "High excitation photoluminescence effects as a probing tool for the growth of Cu(In,Ga)Se₂", Proc. SPIE 9358, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IV, 93581A (16 March 2015); https://doi.org/10.1117/12.2076938

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