Paper
14 March 2015 Accurate simulation of terahertz transmission through doped silicon junctions
Chih-Yu Jen, Christiaan Richter
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Abstract
In the previous work we presented results demonstrating the ability of transmission mode terahertz time domain spectroscopy (THz-TDS) to detect doping profile differences and deviations in silicon. This capability is potentially useful for quality control in the semiconductor and photovoltaic industry. We shared subsequent experimental results revealing that terahertz interactions with both electrons and holes are strong enough to recognize both n- and p-type doping profile changes. We also displayed that the relatively long wavelength (~ 1 mm) of THz radiation allows this approach to be compatible with surface treatments like for instance the texturing (scattering layer) typically used in the solar industry. In this work we continuously demonstrate the accuracy with which current terahertz optical models can simulate the power spectrum of terahertz radiation transmitted through junctions with known doping profiles (as determined with SIMS). We conclude that current optical models predict the terahertz transmission and absorption in silicon junctions well.
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Chih-Yu Jen and Christiaan Richter "Accurate simulation of terahertz transmission through doped silicon junctions", Proc. SPIE 9361, Ultrafast Phenomena and Nanophotonics XIX, 93611H (14 March 2015); https://doi.org/10.1117/12.2077007
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KEYWORDS
Silicon

Doping

Terahertz radiation

Terahertz spectroscopy

Electrons

Photovoltaics

P-type semiconductors

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