Progress of high-power deep-ultraviolet LEDs

A. Fujioka; K. Asada; H. Yamada; T. Ohtsuka; T. Ogawa; T. Kosugi; D. Kishikawa; T. Mukai

doi:10.1117/12.2078620

13 March 2015 Progress of high-power deep-ultraviolet LEDs

A. Fujioka, K. Asada, H. Yamada, T. Ohtsuka, T. Ogawa, T. Kosugi, D. Kishikawa, T. Mukai

Proceedings Volume 9363, Gallium Nitride Materials and Devices X; 93631L (2015) https://doi.org/10.1117/12.2078620
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

High output power deep-ultraviolet light-emitting diodes (LEDs) are reported. First, two series devices were operated at a forward current of 350 mA. We measured powers of 45.2, 93.3, and 65.8 mW for 255, 280, and 310-nm LEDs, respectively. Next, single-chip devices with a modified epitaxial structure and electrode pattern were evaluated. Peak wavelengths, output powers, forward voltages, and external quantum efficiencies were respectively 258.0 nm, 34.8 mW, 8.25 V, 2.07% for the 255-nm LED, 282.8 nm, 40.5 mW, 5.69 V, 2.64% for the 280-nm LED, and 312.3 nm, 40.1 mW, 6.36 V, 2.89% for the 310-nm LED. The 70% lifetime of the 280-nm LED was estimated to be over 3000 h at a junction temperature of 45°C.

Citation Download Citation

A. Fujioka, K. Asada, H. Yamada, T. Ohtsuka, T. Ogawa, T. Kosugi, D. Kishikawa, and T. Mukai "Progress of high-power deep-ultraviolet LEDs", Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93631L (13 March 2015); https://doi.org/10.1117/12.2078620

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