Characterization of molybdenum doped indium oxide/aluminum doped zinc oxide thin film stacks for optoelectronic applications

Elangovan Elamurugu; Raquel Flores; Ricardo Janeiro; Marcus Dahlem; Jaime Viegas

doi:10.1117/12.2080754

13 March 2015 Characterization of molybdenum doped indium oxide/aluminum doped zinc oxide thin film stacks for optoelectronic applications

Elangovan Elamurugu, Raquel Flores, Ricardo Janeiro, Marcus Dahlem, Jaime Viegas

Author Affiliations +

Proceedings Volume 9364, Oxide-based Materials and Devices VI; 936405 (2015) https://doi.org/10.1117/12.2080754
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

Multilayer (ML) thin films, based on indium molybdenum oxide (IMO) and aluminum zinc oxide (AZO), having different stacking were deposited using RF sputtering at room temperature (RT). The total-layer thickness of the MLs ranges between 93 nm and 98 nm. The deposited films were characterized by their structural, electrical, microstructural, and optical properties. X-ray diffraction (XRD) peaks obtained at 2θ of around 30.6° and 34.27° are matched with cubic-In₂O₃ (222) and hexagonal-ZnO (002), respectively. The MLs have both nano-crystalline and polycrystalline structures depending on the layer properties. A conspicuous feature of XRD analysis is the absence of diffraction peak from 50 nm thick IMO layer when it is stacked below 50 nm thick AZO, whereas it appears significantly when the stacking is reversed to place IMO above AZO layer. Hall measurements confirmed that the deposited MLs are n- type conducting and the electrical properties are varied as a function of layer properties. The deposited MLs show high shortwavelength infrared transmittance (SWIRT) even at 3300 nm, which is ranging as high as 75 % - 90 %. Overall, the MLs show high transmittance in the entire Vis-SWIR region. The optical band gap (E_g) calculated using the absorption coefficient (α) and photon energy (hν) of the deposited MLs is ranging between 3.19 eV and 3.56 eV, depending on the layer properties. Selected as- deposited films were annealed in open air at 400 °C for 1 h; the transmittance of annealed films was improved but their electrical properties deteriorated. Atomic force microscopy (AFM) analysis shows that the root-mean-square (RMS) roughness of the MLs ranges between 0.8 nm and 1.5 nm.

Citation Download Citation

Elangovan Elamurugu, Raquel Flores, Ricardo Janeiro, Marcus Dahlem, and Jaime Viegas "Characterization of molybdenum doped indium oxide/aluminum doped zinc oxide thin film stacks for optoelectronic applications", Proc. SPIE 9364, Oxide-based Materials and Devices VI, 936405 (13 March 2015); https://doi.org/10.1117/12.2080754

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available