Paper
3 April 2015 A CWDM photoreceiver module for 10 Gb/s x 4ch interconnection based on a vertical-illumination-type Ge-on-Si photodetectors and a silica-based AWG
Ki-Seok Jang, Jiho Joo, Taeyong Kim, Sanghoon Kim, Jin Hyuk Oh, In Gyoo Kim, Sun Ae Kim, Gyungock Kim
Author Affiliations +
Proceedings Volume 9368, Optical Interconnects XV; 93680C (2015) https://doi.org/10.1117/12.2078844
Event: SPIE OPTO, 2015, San Francisco, California, United States
Abstract
We report a 40 Gb/s photoreceiver based on vertical-illumination type Ge-on-Si photodetectors and a silica-based AWG demultiplexer by employing 4-channel CWDM. The 60um-diameter Ge-on-Si photodetector arrays, grown on a bulk silicon wafer by RPCVD and fabricated with CMOS-compatible process, have ~0.9 A/W responsivity with 13 GHz bandwidth at λ ~ 1330nm. Ge-on-Si photodetector arrays are hybrid-integrated with TIA/LAs and directly-coupled to the AWG. The low-cost FPCB-package based photoreceiver module shows 10.3 Gb/s × 4-channel interconnection with -11 ~ -12.2 dBm sensitivity at a BER = 10-12.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ki-Seok Jang, Jiho Joo, Taeyong Kim, Sanghoon Kim, Jin Hyuk Oh, In Gyoo Kim, Sun Ae Kim, and Gyungock Kim "A CWDM photoreceiver module for 10 Gb/s x 4ch interconnection based on a vertical-illumination-type Ge-on-Si photodetectors and a silica-based AWG", Proc. SPIE 9368, Optical Interconnects XV, 93680C (3 April 2015); https://doi.org/10.1117/12.2078844
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Germanium

Photodetectors

Coarse wavelength division multiplexing

Silica

Silicon

Demultiplexers

Absorption

Back to Top