Physics and technology of antimonide heterostructure devices at SCD

Philip Klipstein

doi:10.1117/12.2082938

8 February 2015 Physics and technology of antimonide heterostructure devices at SCD

Philip Klipstein

Proceedings Volume 9370, Quantum Sensing and Nanophotonic Devices XII; 937020 (2015) https://doi.org/10.1117/12.2082938
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

SCD has developed a range of advanced infrared detectors based on III-V semiconductor heterostructures, grown on GaSb. The XBn/XBp family of detectors enables diffusion limited behavior with dark currents comparable with MCT Rule-07 and with high quantum efficiencies. InAsSb/AlSbAs based XBn focal plane array detectors with a cut-off wavelength of ~ 4.1 μm and formats presently up to 1024×1280 / 15 μm, operate with background limited performance up to ~175 K at F/3. They have a sensitivity and image quality comparable with those of standard InSb detectors working at 77K. In an XBp configuration, the same concept has been applied to an InAs/GaSb type II superlattice (T2SL) detector with a cut-off wavelength of ~ 9.5 μm, which operates with background limited performance up to ~100 K at F/2. In order to design our detectors effectively, a suite of simulation algorithms was developed based on the k ⋅ p and optical transfer matrix methods. In a given T2SL detector, the complete spectral response curve can be predicted essentially from a knowledge of the InAs and GaSb layer widths in a single period of the superlattice. Gallium free T2SL detectors in which the GaSb layer is replaced with InAs1-xSbx (x ~ 0.15-0.5) have also been simulated and the predicted spectral response compared for the two detector types.

Citation Download Citation

Philip Klipstein "Physics and technology of antimonide heterostructure devices at SCD", Proc. SPIE 9370, Quantum Sensing and Nanophotonic Devices XII, 937020 (8 February 2015); https://doi.org/10.1117/12.2082938

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