Paper
10 March 2015 Dynamic characteristics of double tunneling-injection quantum dot lasers
Author Affiliations +
Proceedings Volume 9382, Novel In-Plane Semiconductor Lasers XIV; 93820H (2015) https://doi.org/10.1117/12.2078550
Event: SPIE OPTO, 2015, San Francisco, California, United States
Abstract
Dynamic characteristics of double tunneling-injection (DTI) quantum dot (QD) lasers are studied. To reveal the potential of such lasers for high-speed direct modulation of their optical output by pump current, fast carrier injection into QDs and no carrier leakage from QDs are assumed. The small-signal analysis of rate equations is applied. The modulation bandwidth is calculated as a function of the dc component of the injection current density and parameters of the laser structure.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Levon V. Asryan "Dynamic characteristics of double tunneling-injection quantum dot lasers", Proc. SPIE 9382, Novel In-Plane Semiconductor Lasers XIV, 93820H (10 March 2015); https://doi.org/10.1117/12.2078550
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Quantum wells

Electrons

Diffusion tensor imaging

Modulation

Photons

Semiconductor lasers

Quantum dot lasers

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