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10 March 2015 Theory and observation on non-linear effects limiting the coherence properties of high-Q hybrid Si/III-V lasers
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Proceedings Volume 9382, Novel In-Plane Semiconductor Lasers XIV; 93820N (2015) https://doi.org/10.1117/12.2078067
Event: SPIE OPTO, 2015, San Francisco, California, United States
Abstract
Hybrid Si/III-V is a promising platform for semiconductor narrow-linewidth lasers, since light can be efficiently stored in low loss silicon and amplified in III-V materials. The introduction of a high-Q cavity in silicon as an integral part of the laser's resonator leads to major reduction of the laser linewidth. However, the large intra-cavity field intensity resulting from the high-Q operation gives rise to non-linear effects. We present a theoretical model based on non-linear rate equations to study the effect of two-photon absorption and induced free-carrier absorption in silicon on the laser's performance. The predictions from this model are compared to the experimental results obtained from narrow-linewidth lasers fabricated by us. It is shown to have an effect on the linearity of the L-I curve, and to reduce the achievable Schawlow- Townes linewidth.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yaakov Vilenchik, Christos T. Santis, Scott T. Steger, Naresh Satyan, and Amnon Yariv "Theory and observation on non-linear effects limiting the coherence properties of high-Q hybrid Si/III-V lasers", Proc. SPIE 9382, Novel In-Plane Semiconductor Lasers XIV, 93820N (10 March 2015); https://doi.org/10.1117/12.2078067
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