Paper
10 March 2015 Dynamic and static concept of laser-thyristor for high-peak power lasing
Sergey Slipchenko, Alexsandr Podoskin, Nikita Pikhtin, Valentin Yuferev, Ilya Tarasov
Author Affiliations +
Proceedings Volume 9382, Novel In-Plane Semiconductor Lasers XIV; 93821S (2015) https://doi.org/10.1117/12.2077888
Event: SPIE OPTO, 2015, San Francisco, California, United States
Abstract
The model of a new type of high-power laser light generators, based on epitaxially and functionally integrated fast highpower current switch and laser heterostructure, the so-called laser-thyristor, has been developed. In this model, the functional characteristics of the laser-thyristor were analyzed by considering the epitaxially integrated structure as an optoelectronic pair constituted by a heterophototransistor and a laser diode. It was demonstrated that the turn-on of lasing fundamentally affects the injection efficiency of the laser-thyristor. The dynamic characteristics of the laser-thyristor were examined by using analytical relations for the optical feedback. It is shown that the impact ionization can substantially raise the build-up rate of the through current across the laser-thyristor structure and, as a result, make shorter the leading edge of a laser pulse. It is demonstrated that the developed dynamic model is in good agreement with experimental results at the maximum blocking voltages.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sergey Slipchenko, Alexsandr Podoskin, Nikita Pikhtin, Valentin Yuferev, and Ilya Tarasov "Dynamic and static concept of laser-thyristor for high-peak power lasing", Proc. SPIE 9382, Novel In-Plane Semiconductor Lasers XIV, 93821S (10 March 2015); https://doi.org/10.1117/12.2077888
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Cited by 2 scholarly publications.
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KEYWORDS
Ionization

Heterojunctions

Semiconductor lasers

Laser development

Electrons

High power lasers

Integration

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