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10 March 2015 Dynamic and static concept of laser-thyristor for high-peak power lasing
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Proceedings Volume 9382, Novel In-Plane Semiconductor Lasers XIV; 93821S (2015) https://doi.org/10.1117/12.2077888
Event: SPIE OPTO, 2015, San Francisco, California, United States
Abstract
The model of a new type of high-power laser light generators, based on epitaxially and functionally integrated fast highpower current switch and laser heterostructure, the so-called laser-thyristor, has been developed. In this model, the functional characteristics of the laser-thyristor were analyzed by considering the epitaxially integrated structure as an optoelectronic pair constituted by a heterophototransistor and a laser diode. It was demonstrated that the turn-on of lasing fundamentally affects the injection efficiency of the laser-thyristor. The dynamic characteristics of the laser-thyristor were examined by using analytical relations for the optical feedback. It is shown that the impact ionization can substantially raise the build-up rate of the through current across the laser-thyristor structure and, as a result, make shorter the leading edge of a laser pulse. It is demonstrated that the developed dynamic model is in good agreement with experimental results at the maximum blocking voltages.
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Sergey Slipchenko, Alexsandr Podoskin, Nikita Pikhtin, Valentin Yuferev, and Ilya Tarasov "Dynamic and static concept of laser-thyristor for high-peak power lasing", Proc. SPIE 9382, Novel In-Plane Semiconductor Lasers XIV, 93821S (10 March 2015); https://doi.org/10.1117/12.2077888
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