Paper
22 August 1988 Cooling Of Hot Electron-Hole-Plasmas In GaAs Quantum Wells
K. Leo, W. W. Ruhle
Author Affiliations +
Proceedings Volume 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II; (1988) https://doi.org/10.1117/12.947220
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
The cooling of hot carriers is systematically investigated in undoped, n-doped, and p-doped GaAs/A1GaAs quantum wells of different well widths by time-resolved luminescence spectroscopy. The energy-loss of electrons by scattering with optical phonons is highly reduced at all excitation densities compared to a simple theory of the interactions; for holes, the energy-loss comes close to theory at low excitation density. The energy-loss rates of the carriers are, however, within error independent of dimensionality and well width. The reduction of the energy-loss-rate by optical phonon scattering cannot be explained by screening or degeneracy. It is qualitatively consistent with a hot phonon effect. The energy-loss-rate due to deformation potential scattering with acoustical phonons increases with decreasing well width.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. Leo and W. W. Ruhle "Cooling Of Hot Electron-Hole-Plasmas In GaAs Quantum Wells", Proc. SPIE 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II, (22 August 1988); https://doi.org/10.1117/12.947220
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Cited by 6 scholarly publications.
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KEYWORDS
Phonons

Quantum wells

Scattering

Gallium arsenide

Doping

Luminescence

Laser scattering

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