Picosecond Raman Scattering From Non-Equilibrium Collective Modes In Diamond And Zincblende Semiconductors

Jeff F. Young; Kam Wan; David J. Lockwood; Jean-Marc Baribeau; A. Othonos; H. M. van Driel

doi:10.1117/12.947204

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22 August 1988 Picosecond Raman Scattering From Non-Equilibrium Collective Modes In Diamond And Zincblende Semiconductors

Jeff F. Young, Kam Wan, David J. Lockwood, Jean-Marc Baribeau, A. Othonos, H. M. van Driel

Author Affiliations +

Proceedings Volume 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II; (1988) https://doi.org/10.1117/12.947204
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States

Abstract

Picosecond Raman scattering is a useful probe of non-equilibrium photo-excited carrier and phonon dynamics in group III-V and group IV semiconductors. In group III-V materials, time-resolved Raman scattering is used to explicitly demonstrate the strong long-range coupling of non-equilibrium free carriers with longitudinal optic phonon modes. This effect is exploited to provide a probe of the non-equilibrium free carrier density. In group IV materials, the absence of long range plasma-lattice interactions enables the generation and observation of non-equilibrium optical phonon modes in the presence of photo-excited plasma densities as high as 1 x 1019 cm^-3. The non-equilibrium phonons in Ge and Gel_xSix alloys exhibit significantly different properties than those observed previously by others in GaAs and Ga1_xA1xAs.

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Jeff F. Young, Kam Wan, David J. Lockwood, Jean-Marc Baribeau, A. Othonos, and H. M. van Driel "Picosecond Raman Scattering From Non-Equilibrium Collective Modes In Diamond And Zincblende Semiconductors", Proc. SPIE 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II, (22 August 1988); https://doi.org/10.1117/12.947204

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