Time-Resolved Raman Studies In GaAs-Al[sub]x[/sub] Ga[sub]1_x[/sub]As Multiple Quantum Well Structures

K. T. Tsen; Shu-Chen Y. Tsen; H. Morkoc

doi:10.1117/12.947202

22 August 1988 Time-Resolved Raman Studies In GaAs-Al_x Ga_{1_x}As Multiple Quantum Well Structures

K. T. Tsen, Shu-Chen Y. Tsen, H. Morkoc

Proceedings Volume 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II; (1988) https://doi.org/10.1117/12.947202
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States

Abstract

Time-resolved Raman scattering has been employed to investigate phonon-phonon interactions in GaAs-AlxGal_xAs multiple quantum well structures. By separately monitoring the growth as well as decay of the non-equilibrium LO phonons created by the relaxing carriers inside each type of layers, information about the hot carrier dynamics such as the population relaxation time of the LO phonons has been obtained. Our experimental results have shown that (1) phonon zone-folding plays little role in the determination of the population relaxation time of GaAs, GaAs-like and AlAs-like LO phonons; (2) hot-phonon effect should also be important in the AlxGal_xAs layers of GaAs-AlxGai_xAs multiple quantum well structures; (3) the average population relaxation time of the LO phonons which are active in hot-phonon effect in GaAs quantum wells is determined to be 8±1ps at T=10K.

Citation Download Citation

K. T. Tsen, Shu-Chen Y. Tsen, and H. Morkoc "Time-Resolved Raman Studies In GaAs-Al_x Ga_{1_x}As Multiple Quantum Well Structures", Proc. SPIE 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II, (22 August 1988); https://doi.org/10.1117/12.947202

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