Translator Disclaimer
Paper
22 August 1988 Transient Electronic Phenomena in a Highly Excited II-VI Compound Semiconductor Quantum Well: CdTe/(Cd,Mn)Te
Author Affiliations +
Proceedings Volume 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II; (1988) https://doi.org/10.1117/12.947221
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
Experimental results of quasi steady state and time-resolved luminescence spectroscopy are reported from highly excited CdTe quantum wells and discussed in terms of the exciton and electron-hole plasma (EHP) phases. Steady state spectra shows the presence of three principal regimes with increasing excitation intensity: exciton gas in the collision dominated regime, exciton-EHP phase transition, and the plasma dominated regime with bandgap renormalization. The phase transition regime has been further investigated by time-resolved spectroscopy which indicates a degree of coexistence for the dense exciton and EHP phases shortly following the excitation by a short laser pulse.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Donghan Lee, Arto V. Nurmikko, Leslie A. Kolodziejski, and Robert L. Gunshor "Transient Electronic Phenomena in a Highly Excited II-VI Compound Semiconductor Quantum Well: CdTe/(Cd,Mn)Te", Proc. SPIE 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II, (22 August 1988); https://doi.org/10.1117/12.947221
PROCEEDINGS
5 PAGES


SHARE
Advertisement
Advertisement
Back to Top