Extending resolution limits of EUV resist materials

Marie Krysak; Michael Leeson; Eungnak Han; James Blackwell; Shane Harlson

doi:10.1117/12.2086276

19 March 2015 Extending resolution limits of EUV resist materials

Marie Krysak, Michael Leeson, Eungnak Han, James Blackwell, Shane Harlson

Proceedings Volume 9422, Extreme Ultraviolet (EUV) Lithography VI; 942205 (2015) https://doi.org/10.1117/12.2086276
Event: SPIE Advanced Lithography, 2015, San Jose, California, United States

Abstract

Extreme ultraviolet lithography (EUVL) technology continues to progress and remains a viable candidate for next generation lithography1, which drives the need for EUV resists capable of high resolution with high sensitivity and low LWR. While chemically amplified resists (CARs) have demonstrated the ability to pattern 12nm half-pitch features2, pattern collapse continues to limit their ultimate resolution. We have taken multiple approaches to extend resist capabilities past these limits. Recent results in pattern collapse mitigation using a resist encapsulation and etch back strategy will be discussed. We continue to investigate EUV patterning of semi-inorganic resists to simultaneously increase EUV photon absorption and extend mechanical strength beyond CAR capabilities. The limitations of metal oxide-based nanoparticle photoresists have been investigated, and have provided key insights to further understanding the mechanism of this class of materials.

Citation Download Citation

Marie Krysak, Michael Leeson, Eungnak Han, James Blackwell, and Shane Harlson "Extending resolution limits of EUV resist materials", Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 942205 (19 March 2015); https://doi.org/10.1117/12.2086276

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