Alternative materials for high numerical aperture extreme ultraviolet lithography mask stacks

Obert Wood II; Sudharshanan Raghunathan; Pawitter Mangat; Vicky Philipsen; Vu Luong; Patrick Kearney; Erik Verduijn; Aditya Kumar; Suraj Patil; Christian Laubis; Victor Soltwisch; Frank Scholze

doi:10.1117/12.2085022

16 March 2015 Alternative materials for high numerical aperture extreme ultraviolet lithography mask stacks

Obert Wood II, Sudharshanan Raghunathan, Pawitter Mangat, Vicky Philipsen, Vu Luong, Patrick Kearney, Erik Verduijn, Aditya Kumar, Suraj Patil, Christian Laubis, Victor Soltwisch, Frank Scholze

Author Affiliations +

Proceedings Volume 9422, Extreme Ultraviolet (EUV) Lithography VI; 94220I (2015) https://doi.org/10.1117/12.2085022
Event: SPIE Advanced Lithography, 2015, San Jose, California, United States

Abstract

In this paper we compare the imaging performance of several options currently under consideration for use in 0.33 and higher numerical aperture (NA) extreme ultraviolet (EUV) mask stacks, Mo/Si ML reflective coatings with 40 bilayers, Ru/Si multilayer (ML) reflective coatings with 20 bilayers, and a new thinner Ni-based absorber layer on each of these mask stacks. The use of a Ru/Si ML coating with its shallower effective reflectance plane and a 2x thinner Ni-based absorber is expected to significantly reduce both shadow bias requirements and mask telecentricity errors. The conclusions of the paper are supported with the results of both experimental measurements and rigorous simulations.

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Obert Wood II, Sudharshanan Raghunathan, Pawitter Mangat, Vicky Philipsen, Vu Luong, Patrick Kearney, Erik Verduijn, Aditya Kumar, Suraj Patil, Christian Laubis, Victor Soltwisch, and Frank Scholze "Alternative materials for high numerical aperture extreme ultraviolet lithography mask stacks", Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 94220I (16 March 2015); https://doi.org/10.1117/12.2085022

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