Paper
13 March 2015 Acid generation mechanism in anion-bound chemically amplified resists used for extreme ultraviolet lithography
Author Affiliations +
Abstract
Extreme ultraviolet (EUV) lithography is the most promising candidate for the high-volume production of semiconductor devices with half-pitches of sub 10nm. An anion-bound polymer(ABP), in which at the anion part of onium salts is polymerized, has attracted much attention from the viewpoint of the control of acid diffusion. In this study, the acid generation mechanism in ABP films was investigated using γ and EUV radiolysis. On the basis of experimental results, the acid generation mechanism in anion-bound chemically amplified resists was proposed. The protons of acids are considered to be mainly generated through the reaction of phenyl radicals with diphenylsulfide radical cations that are produced through the hole transfer to the decomposition products of onium salts.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoshitaka Komuro, Hiroki Yamamoto, Kazuo Kobayashi, Katsumi Ohomori, and Takahiro Kozawa "Acid generation mechanism in anion-bound chemically amplified resists used for extreme ultraviolet lithography", Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 94220O (13 March 2015); https://doi.org/10.1117/12.2085749
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Extreme ultraviolet

Extreme ultraviolet lithography

Polymers

Double positive medium

Chemically amplified resists

Quantum efficiency

Diffusion

Back to Top