Paper
13 March 2015 Advanced coatings for next generation lithography
Author Affiliations +
Abstract
Beyond EUV lithography at 6.X nm wavelength has a potential to extend EUVL beyond the 11 nm node. To implement B-based mirrors and to enable their industrial application in lithography tools, a reflectivity level of > 70% has to be reached in near future. The authors will prove that transition from conventional La/B4C to promising LaN/B4C multilayer coatings leads to enhanced optical properties. Currently a near normal-incidence reflectivity of 58.1% @ 6.65 nm is achieved by LaN/B4C multilayer mirrors. The introduction of ultrathin diffusion barriers into the multilayer design to reach the targeted reflectivity of 70% was also tested. The optimization of multilayer design and deposition process for interface-engineered La/C/B4C multilayer mirrors resulted in peak reflectivity of 56.8% at the wavelength of 6.66 nm. In addition, the thermal stability of several selected multilayers was investigated and will be discussed.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. Naujok, Sergiy Yulin, N. Kaiser, and A. Tünnermann "Advanced coatings for next generation lithography", Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 94221K (13 March 2015); https://doi.org/10.1117/12.2085764
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Cited by 2 scholarly publications.
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KEYWORDS
Mirrors

Reflectivity

Multilayers

Interfaces

Lanthanum

Diffusion

Extreme ultraviolet lithography

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