Paper
19 March 2015 An accurate method to determine the amount of out-of-band light in an EUV scanner
Shinn-Sheng Yu, Yen-Cheng Lu, Chih-Tsung Shih, Chia-Chun Chung, Shang-Chieh Chien, Shun-Der Wu, Norman Chen, Shu-Hao Chang, Hsiang-Yu Chou, Jui-Ching Wu, Tao-Ming Huang, Jack J. H. Chen, Anthony Yen
Author Affiliations +
Abstract
In this paper, we proposed a new design of the test mask to measure the amount of the out-of-band (OOB) light from an extreme-ultraviolet (EUV) light source by detuning the period of the multilayer (ML), rather than changing the material of the absorber, to suppress reflection of EUV light. The new OOB test mask also reflects essentially the same OOB light as that of the production mask at each wavelength in the whole OOB spectral range. With the help of the new OOB test mask, the contributions to the background intensity from in-band flare and OOB light can be correctly separated and an accurate optical-proximity-correction (OPC) model can be established.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shinn-Sheng Yu, Yen-Cheng Lu, Chih-Tsung Shih, Chia-Chun Chung, Shang-Chieh Chien, Shun-Der Wu, Norman Chen, Shu-Hao Chang, Hsiang-Yu Chou, Jui-Ching Wu, Tao-Ming Huang, Jack J. H. Chen, and Anthony Yen "An accurate method to determine the amount of out-of-band light in an EUV scanner", Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 94221T (19 March 2015); https://doi.org/10.1117/12.2085089
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KEYWORDS
Extreme ultraviolet lithography

Extreme ultraviolet

Photomasks

Optical proximity correction

Reflectivity

Aluminum

Line width roughness

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