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19 March 2015 Modeling of bi-spectral primary source for the EUV lithography
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Abstract
It is shown that the power consumption in the double-pulse bi-spectral primary source for EUV lithography can be substantially decrease by replacing pre-amplifiers in power CO2 laser with the SRS converters wavelength 1.06 μm to 10.6 μm while maintaining efficiency of EUV radiation output of illuminated plasma.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. P. Zhevlakov, R. P. Seisyan, V. G. Bespalov, V. V. Elizarov, A. S. Grishkanich, and S. V. Kascheev "Modeling of bi-spectral primary source for the EUV lithography", Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 94222M (19 March 2015); https://doi.org/10.1117/12.2086272
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