Scatterometry-based metrology for the 14nm node double patterning lithography

D. Carau; R. Bouyssou; J. Ducoté; F. Dettoni; A. Ostrovsky; B. Le Gratiet; C. Dezauzier; M. Besacier; C. Gourgon

doi:10.1117/12.2085775

19 March 2015 Scatterometry-based metrology for the 14nm node double patterning lithography

D. Carau, R. Bouyssou, J. Ducoté, F. Dettoni, A. Ostrovsky, B. Le Gratiet, C. Dezauzier, M. Besacier, C. Gourgon

Proceedings Volume 9424, Metrology, Inspection, and Process Control for Microlithography XXIX; 942410 (2015) https://doi.org/10.1117/12.2085775
Event: SPIE Advanced Lithography, 2015, San Jose, California, United States

Abstract

Critical dimension and overlay measurements have become a key challenge in microelectronics process control, and the weight of metrology in the success of a patterning technique is increasing. For the 14 nm node, the limit of scanner resolution can be overcome by double patterning, which requires a maximum overlay variability of 3 nm between the two reticles of the first metal level. In the double patterning case of metal layers, critical dimension of line spaces and overlay are no longer independent. In this paper, the possibility of a common measurement after the second lithography is studied. Scatterometry has been used to fit successfully the critical dimension of the two sublevels. As sensitivity to overlay is too low in device-like target, a strategy has been implemented from diffraction-based overlay measurement. So it becomes possible to provide information on the lithography step quality before the second etch process to enable rework if necessary. Finally a scatterometry target has been designed to fit simultaneously the two critical dimensions and overlay. This target, which is designed to maximize overlay sensitivity, has been placed in the next 14 nm CMOS product and is expected to make this scatterometry method even more attractive.

Citation Download Citation

D. Carau, R. Bouyssou, J. Ducoté, F. Dettoni, A. Ostrovsky, B. Le Gratiet, C. Dezauzier, M. Besacier, and C. Gourgon "Scatterometry-based metrology for the 14nm node double patterning lithography", Proc. SPIE 9424, Metrology, Inspection, and Process Control for Microlithography XXIX, 942410 (19 March 2015); https://doi.org/10.1117/12.2085775

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available