Tailored molecular glass resists for scanning probe lithography

Christian Neuber; Hans-Werner Schmidt; Peter Strohriegl; Andreas Ringk; Tristan Kolb; Andreas Schedl; Vincent Fokkema; Marijn G. A. van Veghel; Mike Cooke; Colin Rawlings; Urs Dürig; Armin Knoll; Jean- François de Marneffe; Ziad el Otell; Marcus Kaestner; Yana Krivoshapkina; Matthias Budden; Ivo W. Rangelow

doi:10.1117/12.2085734

20 March 2015 Tailored molecular glass resists for scanning probe lithography

Christian Neuber, Hans-Werner Schmidt, Peter Strohriegl, Andreas Ringk, Tristan Kolb, Andreas Schedl, Vincent Fokkema, Marijn G. A. van Veghel, Mike Cooke, Colin Rawlings, Urs Dürig, Armin Knoll, Jean- François de Marneffe, Ziad el Otell, Marcus Kaestner, Yana Krivoshapkina, Matthias Budden, Ivo W. Rangelow

Author Affiliations +

Proceedings Volume 9425, Advances in Patterning Materials and Processes XXXII; 94250E (2015) https://doi.org/10.1117/12.2085734
Event: SPIE Advanced Lithography, 2015, San Jose, California, United States

Abstract

In the presented work solvent-free film preparation from tailored molecular glass resists, their thermal analysis, the characterization of etch resistance for plasma etching transfer processes, and the evaluation of the patterning performance using scanning probe lithography (SPL) tools, in particular electric field and thermal based SPL, are demonstrated. Therefore a series of fully aromatic spiro-based and tris-substituted twisted resist materials were systematically investigated. The materials feature very high glass transition temperatures of up to 173 °C, which allows solvent-free thin film preparation by physical vapor deposition (PVD) due to their high thermal stability. The PVD prepared films offer distinct advantages compared to spin coated films such as no pinholes, defects, or residual solvent domains, which can locally affect the film properties. In addition, PVD prepared films do not need a post apply bake (PAB) and can be precisely prepared in the nanometer range layer thickness. An observed sufficient plasma etching resistance is promising for an efficient pattern transfer even by utilizing only 10 nm thin resist films. Their lithographic resolution potential is demonstrated by a positive and a negative tone patterning using electric field, current controlled scanning probe lithography (EF-CC-SPL) at the Technical University of Ilmenau or thermal scanning probe lithography (tSPL) investigations at the IBM Research - Zurich. High resolution tSPL prepared patterns of 11 nm half pitch and at 4 nm patterning depth are demonstrated.

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Christian Neuber, Hans-Werner Schmidt, Peter Strohriegl, Andreas Ringk, Tristan Kolb, Andreas Schedl, Vincent Fokkema, Marijn G. A. van Veghel, Mike Cooke, Colin Rawlings, Urs Dürig, Armin Knoll, Jean- François de Marneffe, Ziad el Otell, Marcus Kaestner, Yana Krivoshapkina, Matthias Budden, and Ivo W. Rangelow "Tailored molecular glass resists for scanning probe lithography", Proc. SPIE 9425, Advances in Patterning Materials and Processes XXXII, 94250E (20 March 2015); https://doi.org/10.1117/12.2085734

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