Revealing beam-induced chemistry using modulus mapping in negative-tone EUV/e-beam resists with and without cross-linker additives

Prashant Kulshreshtha; Ken Maruyama; Scott Dhuey; Dominik Ziegler; Weilun Chao; Paul Ashby; Deirdre Olynick

doi:10.1117/12.2086045

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20 March 2015 Revealing beam-induced chemistry using modulus mapping in negative-tone EUV/e-beam resists with and without cross-linker additives

Prashant Kulshreshtha, Ken Maruyama, Scott Dhuey, Dominik Ziegler, Weilun Chao, Paul Ashby, Deirdre Olynick

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Proceedings Volume 9425, Advances in Patterning Materials and Processes XXXII; 94250I (2015) https://doi.org/10.1117/12.2086045
Event: SPIE Advanced Lithography, 2015, San Jose, California, United States

Abstract

One of the key challenges to high resolution resist patterning is probing the resist properties at length scales commensurate with the pattern size. Using a new scanning probe microscopy (SPM), Peak Force™ tapping, we map exposure dependent nanoscale modulus of the exposed/developed resist patterns with sub-10 nm resolution. By innovative electron beam exposure pattern design, the SPM technique reveals that resist modulus follows the height contrast profile, but with a shift to higher exposure doses. SEM image analysis of patterned resist structures confirm that the best line-space patterns are achieved at exposure dose where modulus reaches its maximum and shows how modulus can be used to probe patternability of resist systems.

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Prashant Kulshreshtha, Ken Maruyama, Scott Dhuey, Dominik Ziegler, Weilun Chao, Paul Ashby, and Deirdre Olynick "Revealing beam-induced chemistry using modulus mapping in negative-tone EUV/e-beam resists with and without cross-linker additives", Proc. SPIE 9425, Advances in Patterning Materials and Processes XXXII, 94250I (20 March 2015); https://doi.org/10.1117/12.2086045

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