Calibrating etch model with SEM contours

François Weisbuch; A. Omran; Kenneth Jantzen

doi:10.1117/12.2180271

18 March 2015 Calibrating etch model with SEM contours

François Weisbuch, A. Omran, Kenneth Jantzen

Proceedings Volume 9426, Optical Microlithography XXVIII; 94261T (2015) https://doi.org/10.1117/12.2180271
Event: SPIE Advanced Lithography, 2015, San Jose, California, United States

Abstract

To ensure a high patterning quality, the etch effects have to be corrected within the OPC recipe in addition to the traditional lithographic effects. This requires the calibration of an accurate etch model and optimization of its implementation in the OPC flow. Using SEM contours is a promising approach to get numerous and highly reliable measurements especially for 2D structures for etch model calibration. A 28nm active layer was selected to calibrate and verify an etch model with 50 structures in total. We optimized the selection of the calibration structures as well as the model density. The implementation of the etch model to adjust the litho target layer allows a significant reduction of weak points. We also demonstrate that the etch model incorporated to the ORC recipe and run on large design can predict many hotspots.

Citation Download Citation

François Weisbuch, A. Omran, and Kenneth Jantzen "Calibrating etch model with SEM contours", Proc. SPIE 9426, Optical Microlithography XXVIII, 94261T (18 March 2015); https://doi.org/10.1117/12.2180271

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