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27 March 2015 Thermal effect on E/M impedance spectroscopy of piezoelectric wafer active sensors
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This paper presents theoretical predictive modeling and experimental evaluation of the structural health monitoring capability of piezoelectric wafer active sensors (PWAS) at elevated temperatures. Electromechanical impedance spectroscopy (EMIS) method is first qualified using circular PWAS resonators under traction-free boundary condition and in an ambience with increasing temperature. The theoretical study is conducted regarding temperature dependence of the electrical parameters, the capacitance C0, d31 and g31; and the elastic parameters, the in-plane compliance s11 and Young’s modulus c11, of piezoelectric materials. The Curie transition temperature must be well above the operating temperature; otherwise, the piezoelectric material may depolarize under combined temperature and pressure conditions. The material degradation is investigated by introducing the temperature effects on the material parameters that are obtained from experimental observations as well as from related work in literature. The preliminary results from the analytical 2-D circular PWAS-EMIS simulations are presented and validated by the experimental PWAS-EMIS measurements at elevated temperatures. Temperature variation may produce pyro-electric charges, which may interfere with the piezoelectric effect. Therefore, analytical simulations are carried out to simulate the pyro-electric response from the temperature effects on a free circular PWAS-EMIS in in-plane mode. For the experimental validation, PWAS transducers are placed in a fixture that provides the traction-free boundary condition. The fixture is then located in an oven integrated with PID temperature controller. The EMIS measurement is conducted during the temperature increase and the first resonance frequency peak in admittance and impedance spectra was acquired.
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Tuncay Kamas, Erik Frankforter, Lingyu Lucy Yu, Bin Lin, and Victor Giurgiutiu "Thermal effect on E/M impedance spectroscopy of piezoelectric wafer active sensors", Proc. SPIE 9435, Sensors and Smart Structures Technologies for Civil, Mechanical, and Aerospace Systems 2015, 94350O (27 March 2015);

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