This PDF file contains the front matter associated with SPIE Proceedings Volume 9440, including the Title Page, Copyright information, Table of Contents, Authors, Introduction (if any), and Conference Committee listing.

Nowadays, some of the important problems in microelectronics technological node scaling down are related to interconnect delay, dynamic power consumption and crosstalk. This compels introduction and integration of new materials with low dielectric permittivity (low-k materials) as insulator in interconnects. One of such materials under consideration for sub 10 nm technology node is a spin-coated organosilicate glass layer with ordered porosity (37-40%) and a k-value of 2.2 (OSG 2.2). High porosity leads to significant challenges during the integration and one of them is a material degradation during the plasma etching. The low-k samples have been etched in a CCP double frequency plasma chamber from TEL. Standard recipes developed for microporous materials with k<2.5 and based on mixture of C4F8 and CF4 with N2, O2 and Ar were found significantly damaging for high-porous ULK materials. The standard etch recipe was compared with oxygen free etch chemistries based on mixture CF4 with CH2F2 and Ar assuming that the presence of oxygen in the first recipe will have significant negative impact in high porous ULK materials. The film damage has been analyzed using FTIR spectroscopy and the k-value has been extracted by capacitance CV-measurements. There was indirectly shown that vacuum ultraviolet photons cause the main damage of low-k, whereas radicals and ions are not so harmful. Trench structures have been etched in low-k film and cross-SEM analysis with and without HF dipping has been performed to reveal patterning capability and visualize the sidewall damage and. The bottom roughness was analyzed by AFM.

Optical, dielectric, thermal, physico-mechanical properties of new fluoro-containing alicyclic polyimides were investigated. High optical transparency in visible and UV ranges of the films with thickness 10-25 μm, which lower boundary was registered at 125-260 nm; as well as reflectivity index being 1.492-1.515 were recorded. Dielectric permeability was characterized with low rates and stability up to 300 °С depending on chemical structure. Polyimides were stable with heating in air up to 320-380 °С. Prepared films show break tensile at 145 MPa with elongation up to 50% due to the excellent film-forming properties. Films based on polyimides with polyaniline composition demonstrates reflectivity index 1.60.

The electric properties of the dielectric stack based hafnium were characterized by C-V and I-V curves before and after annealing. The lowest equivalent oxide thickness (EOT) was obtained after PMA and equals to 0.47 nm. The leakage current for this sample at 1V gate voltage was about 10 A/cm². Charge density in the volume of high-k was extremely high (1.61·10¹⁸ cm^-3). Obtained density of interface charge is equal to moderate value 1.03·10¹² cm^-2.

Crystallization kinetics in thin films of Ge₂Sb₂Te₅ doped by Bi and Ti was studied. It has been shown that introduction of these impurities may have an impact on the kinetic parameters of the crystallization process. The possible recording and storage times of devices based on investigated materials were evaluated. It was shown that GST225 + 0,5 wt. % Bi has the best characteristics among the studied materials. Estimations showed that this composition can provide switching time of the phase-change memory cells less than 1 ns and it is extremely stable at room temperatures which is important for the reliable storage of information in memory cells.

The influence of Bi doping on the charge carrier transport mechanism in GST225 thin films was investigated. The three regions with different current-voltage dependencies were established. The energy diagrams for Bi doped GST225 thin films for different regions were analyzed. Analysis of experimental data showed that space charge limited current is the most possible explanation for the nonlinear I-V dependence in the middle electrical field strength (10³ < E < 10⁴ V/cm). Position of the trap levels (Et) controlling transport mechanism, and density of traps (Nt) were estimated with using of Rose and Lampert theories. It was established that Bi doping can significantly change I-V characteristic, resistivity, mobility gap, Urbach energy, density distribution of localized states, and activation energy of conductivity. The most pronounced modification of current-voltage characteristic and parameters of the thin films was established for GST225 + 0,5 wt. % Bi. Thus, doping of Ge₂Sb₂Te₅ by Bi expands the range of material properties, which is important for the optimization of PCM technology.

A copper sulfide and bismuth sulfide thin films were deposited on Si/Ti substrate by successive ionic layer adsorption and reaction method at room temperature, using cupric chloride, bismuth chloride, complexing Na2EDTA and sodium sulfide aqueous solutions as precursors. The surface morphology, structural and electrical properties of the as-deposited films were investigated by scanning electron and atomic force microscopy, energy dispersive X-ray analysis (EDS), and 2-point probe methods. The films were found to be amorphous, rough with thickness 30 nm and 20 nm for CuSx and BiSx, respectively. Average atomic percentage of Cu:S and Bi:S in the as-deposited films was calculated as 1:1.5 and 2.3:3. It was noted that films possess resistive switching behavior. Ionic conductivity of the CuSx film was found to be 25,8·10-3 Ohm-1·cm-1 . Ionic conductivity of the BiSx film was found to be 16·10-3 Ohm-1·cm-1. Set voltages UON defined by I-V curves were found to be in the range 0,75-0,8 V/cm for both films. Reset voltages UOFF were found to be in the range 0,6-0,7 V/cm for both films. Thus, formed films can be used as active layers for memory devices application.

The investigation of promising materials used as lead-free solders has been conducted for a long time. In this connection, special attention is paid to low-melting-point metals and alloys, however the search for optimal systems is still going on. The systems Ag-Sn due to excellent electronic conductivity are the most attractive ones. The aim of this work is the development of modes of the electrochemical formation of Ag-Sn layers of the required composition on the surface of the copper plate, and also the investigation of the Ag-Sn structure composition influence on thermodynamic properties in the range of temperatures from the room temperature to 500 °С. During the investigation there has been developed a set of recommendations on the choice of appropriate electrolytes for deposition of Sn and Ag, optimal current density for obtaining a high-quality coating. On the basis of the differential scanning calorimetry data, it has been established that the Ag-Sn systems of a certain composition have the optimal characteristics. The obtained results allow us to develop the formation methods of solders with given thermodynamic characteristics and to set the temperature ranges of stability for application as metallization systems. Begin the abstract two lines below author names and addresses. The abstract summarizes key findings in the paper.

A study of copper (Cu) diffusion into silicon substrates through TaN_x and Ta/graded Ta(N)/TaN multilayer diffusion barriers was investigated based on an experimental approach. TaN_x and Ta/graded Ta(N)/TaN thin films were deposited by magnetron sputtering under argon (Ar) and Ar-nitrogen (N) plasma. The influence of the N₂ partial pressure on the microstructure and the electrical properties is reported. The efficiency of TaN_x layers and Ta/graded Ta(N)/TaN multilayer diffusion barriers was investigated after annealing at temperatures between 300 and 600◦C in Ar.

This paper brings forward a solution for acquisition of good quality metallization layers on the polyimide substrate by magnetron deposition in vacuum environment. Different film type structures have been analyzed after refining and activation surface treatment operations. Positive effect was shown after the application of polyimide lacquer for surface dielectric film planarization and for structural defects elimination.

Atmosphere water influence in the nanostructured silicon (NSS) was investigated by IR-spectroscopy and electron work function measurement. Long-term non-reversible dynamics of IR-spectra was found as a result of 100% humidity influence on the nanostructured silicon. It was indicated that air humidity affects on the work function. Dynamics of the electron work function consists of reversible and non-reversible components. Reversible component appears as strong anti-correlation between work function and humidity. Work function change of NSS is about 0.4 eV while the humidity changes between 0% and 100%. Reversible component can be explained by physical sorption of water molecules on the surface. Non-reversible component manifests as long-term decreasing trend of work function in humid atmosphere. Transition curve during abruptly humidity changes alters its shape. Non-reversible component can be explained by chemisorption of water.

Influence of gas sorption and desorption on field emission current evolution from carbon nanotube cathodes was investigated. Two types of nanotube cathodes were made: nanotubes grown from gas phase on stainless steel and nanotubes deposited from solution on Si substrate. Exposure of cathode to air at atmospheric pressure leads to increase of starting current with rapid decrease. We associate this effect of reversible degradation with some kind of field desorption. Sorbed gases reduce the work function and thus increase emission current. Different gases demonstrate different effect on the current behavior. We observed desorption process in low field values ~10⁴−10⁵ V/cm.

In this paper we study the process of plasma enhanced chemical vapor deposition (PECVD) of carbon nanostructures in the form of a film, the pillars, the flakes at a temperature of 100-350 °C from the vapor-gas mixture H2+CO+Ar. Also in the paper presents the structural features of the carbon nanopillars obtained at 250 °C. Determined mechanical stresses occurring during the growth of carbon nanostructures. Investigated the features of the growth of carbon pillars and proposed a phenomenological description of the process of their formation during PECVD process.

In the present work we investigated silver and gold cluster array formation on non-heated thin film substrate of amorphous carbon by means vacuum-thermal evaporation of small quantity of material. In basic experiments two series of samples with a different thickness (1-20 nm) were prepared from weight portion 0.6-11 mg, the distance between evaporator and deposition surface was 20 cm. The investigation of the samples of both series by TEM showed the significant dependence of the particle size and the density of their location on the surface on the quantity of condensing Ag and Au or on the virtual film thickness. The interesting results obtained in the work formed the basis of the model which expands understanding condensation processes, nucleation and growth of the crystalline phase from the gas phase.

Furnace annealing and pulse laser treatments, including nanosecond laser treatments (KrF laser 248 nm wavelength, 20 ns pulse duration and XeCl laser 308 nm wavelength, 10 ns pulse duration) and femtosecond laser treatments (Tisapphire laser, 800 nm wavelength, <30 fs pulse duration) were applied for crystallization of amorphous hydrogenated silicon films, SiO_x films and multilayer nanostructures. The as-deposited and annealed structures were studied using optical methods and electron microscopy techniques. The influence of impurities on crystallization and formation of Si nanoclusters was studied. Regimes for pulse laser crystallization of amorphous Si nanoclusters and nanolayers were found. The developed approach can be used for the creation of dielectric films with semiconductor nanoclusters on nonrefractory substrates.

Structures based on hydrogenated amorphous silicon (a-Si:H) films deposited on various substrates (including not refractory ones) are widely applied in giant microelectronics devices, such as flat panel displays based on active matrix thin-film transistors and solar cells. The a-Si:H films produced by plasma enhanced chemical vapor deposition (PECVD) methods, contain up to 40% atoms of hydrogen. The influence of hydrogen on the optical and electrical properties of the films and their degradation is important. Therefore, the development of express and non-destructive methods for control of the hydrogen concentration in thin films continues to be an actual task to date. Previously, from a comparative analysis of infrared (IR) spectroscopy and Raman scattering spectroscopy, the ratios of the integral intensities of Raman peaks due to scattering by vibrations of the Si-H and Si-H2 bonds to the intensity of Raman peak of the Si-Si bonds were experimentally determined. Knowing these ratios, it is possible to measure the hydrogen concentration, moreover, separately in Si-H and Si-H2 states. Proposed quantitative method for determining of the hydrogen concentration from analysis of the Raman spectra is an express, non-destructive method and can be used for "in situ" monitoring of the hydrogen. The aim of this work was to determine the polarization dependence of Raman scattering by stretching vibrations of Si-H bonds and find the form of the corresponding Raman tensors. From analysis of Raman intensities in different polarizations the Raman tensors for Si-H and Si-H₂ bonds were determined. The regimes for dehydrogenization of thick (up to 1 micron) a-Si:H films were found. The nanosecond pulse XeCl laser with wavelength of 308 nm and pulse duration of 10 ns was used for pulse crystallization of as-deposited and dehydrogenated films. As it was studied earlier, for a-Si:H films with high hydrogen concentration, the threshold for crystallization is very close to threshold of laser ablation. As result of presented studying, it was obtained, that for pulse laser crystallization of a-Si:H films without damages and hydrogen blistering, the optimal concentration of hydrogen should be not higher than 10-15%. The developed approaches can be used for crystallization of a-Si:H films and based on these films nanostructures deposited on non-refractory substrates.

In present work the influence of anodizing process parameters on PAOT geometric parameters for optimizing and increasing ETA-cell efficiency was studied. During the calculations optimal geometrical parameters were obtained. Parameters such as anodizing current density, electrolyte composition and temperature, as well as the anodic oxidation process time were selected for this investigation. Using the optimized TiO2 photoelectrode layer with 3,6 μm porous layer thickness and pore diameter more than 80 nm the ETA-cell efficiency has been increased by 3 times comparing to not nanostructured Ti_O2 photoelectrode.

The features of the formation of multi-component metal sulfide films (Cu2ZnSnS4 and Cu2SnS3) formed by various methods SILAR technology were studied. Using different investigate methods the comparative analysis of the properties and composition of the films were carry out. The formation of a multi-component film in the mixed cationic solution is accompanied by additional processes in the solution and by the appearance of complex compounds. This factors has a strong influence on the composition and purity of the formed films. The characteristics of the solar cell test structures with ultrathin absorbing layer based on Cu2ZnSnS4 and Cu2SnS3 were obtained. It’s necessity to introduce an interlayer and make more carefully study of the composition and interface of the absorber layer.

This paper presents some new results concerning the mechanism, characteristics and feasibility for the suggested by the authors direct method of image formation in some positive resists directly during exposure by the electron beam in a vacuum (dry method of electron-beam etching resist - method DEBER). For PMMA resist as an example it has been shown in particular that the method DEBER very convenient for obtaining a relief micro and nanostructures with a rounded profile cross-section (including spherical, aspheric, sinusoidal etc.) in the PMMA resist. The examples presented of process conditions influence on the form of obtained relief structures. The examples are given to obtain spatial 3Dstructures with good accuracy by Z-axis and with good surface roughness. In general, according to the authors, the data presented indicate significant opportunities for applying the method DEBER, in particular for the manufacture of the optoelectronics elements (diffraction gratings, microlenses, focusers, optical waveguides, anti-reflective coatings, and others.).

Design and main characteristics of high performance fast neutral beam sources based on the ion sources with a cold cathode and a closed drift of electrons in crossed electrical and magnetic fields are described. The output beam is of practically 100% neutrality and has a low level of divergence (<5º) which provides long distance transportation of neutral beams. Etching results for Si, SiO₂, W, NbN, TiN, and TiC with using the working gases Ar, C_F4, C3F₈, and SF₆ are given. Preliminary results for the build-in charge decreasing effect for the Si/SiO₂ interface under a neutral beam treatment are presented.

Formation of ultra shallow p+-junctions in silicon by plasma immersion ion implantation were investigated. The effect of carbon and fluorine coimplantation were studied experimentally. Dependence of this effect from carbon concentration was studied, as well as positive role of multistep annealing for pure boron implanted samples.

During failure analysis of integrated circuits (IC), it is often necessary to have opportunity to inspect surface of die. But modern IC processing technology often provide integration of number of overlaping dies in one package (3D package type). In this case upper die complicate access to low die. Thus finding techniques which provide opportunity to inspect surface of each die is actual. In present work the approaches to a die decoupling based on the exposure to fuming nitric acid (FNA) and temperature cycling of IC are considered. The experiments, carried out for 32 GB flash-drive, have shown the possibility of applying mentioned approaches to a die decoupling.

During failure analysis of modern integrated circuits it might be necessary to carry out investigations, including both analysis of the die topology and the input of electrical signals on its contact pads. However, during access to the die the contact pads might be damaged due to different factors. In present work several types of damaged contact pads and experimental investigations on its reconstructions by electrochemical deposition of silver and copper are discussed.

This work is focused on investigation of the tips sharpening process with the use of defocused ion beam. The group of cantilevers was placed on silicon substrate. It was established that the method enables the simultaneous sharpening of silicon cantilevers tips placed on 200-mm diameter Si substrates. The current work provides information about efficiency of the modified cantilevers.

Molecular single-electron transistors based on small (2 - 4 nm) gold nanoparticles were fabricated using an electronbeam lithography and the electromigration method. Electrical characteristics of the obtained transistors were measured at 77 and 300 K. The characteristics show that the regime of a correlated tunneling of electrons was realized at these high for the process temperatures.

In this paper we study the transient and steady-state photoconductivity of semiconductor nanowires by putting forward the importance of surface recombination in the photocurrent formation. The phenomenological model based on existence of radius and time dependent surface band bending is able to explain both the dark conductivity and dynamics of photoconductivity transients in semiconductor nanowires. The dependence of the variation of surface recombination barrier height on the carrier capture by surface states leads to a non- exponential character of photoconductivity kinetics. Analytic equations are derived to calculate current-voltage and lux-ampere characteristics, photocurrent relaxation and gain under the excitation of light pulses. The analytical results are compared with the experimental data.

In the context of all-weather tracking distant cosmic objects issues, six original schemes of detecting far-infrared radiation are presented here, which approach in their sensitivity to the level that allows their use in photon counting mode. The first one is a modernized version of the Up-converter (with the placement of nonlinear crystal/mixer inside of resonator in a single laser unit) for the transfer of far-infrared photons in the visible range, where the photon counting is possible via PMT or APD. The second scheme of registration far IR is based on the forward bias LED at a current, which is still not enough for the generation of radiation. The experiments allowed to observe photoresponse of such a system for the red border of the internal photoelectric effect. The following three schemes are cryogenic. And the last one is an Up-converter, where instead of the classical mixing on nonlinear crystal is used quantum effect of releasing energy metastable state under the influence of the far-infrared radiation quanta.

A method of detecting of short scalar gravitational waves with a wavelength of λ ~ 0.5 μm is proposed, in contrast to LIGO Project, aimed at detecting of long quadrupole gravitational waves (λ ~ 43 ÷ 10000 km). The conduction electrons in a metal are proposed to use as gravitational receiving antennas instead of massive pendulums. It is shown that using a Large Scale metal diffraction grating you can convert the mechanical vibrations of the conduction electrons of metal into a plane electromagnetic wave propagating along the normal to the grating. It is shown that when the amplitude of the scalar gravitational wave in a source (in quasar at the center of our galaxy) is greater than A_go ≈ 5 1020cm/^s2, you can register it with the help of a large optical telescope equipped with the proposed diffraction grating. It is shown that the special theory of relativity allows the amplitude of the scalar gravitational waves in this source by 5 orders of magnitude greater than the above-mentioned minimum value.

The results of development of driving setup for micromechanical friction vacuum gauge are presented. For driving of the micromechanical transducer the saw-tooth signal was used because of its good repeatability and possibility of automatic operation. Specialized switching card for resonator driving and output signal processing was developed and implemented. Experimental setup consists of PC, electric switching card and oscilloscope was used to explore damped and overdamped oscillations. The study exhibits stable repeatability of driving procedure. Resonator eigenfrequency agrees with calculated value and confirms that oscillations correspond to the main mode. The results can be applied for creation of micromechanical friction vacuum gauges.

This paper describes the application of electrical impedance tomography (EIT) to development of the surface defect sensor that can be used for structural health monitoring (such structural as bridge bearing, airframe, etc.). Thin conductive film with electrodes along its boundaries, as a sensor skin, is applied to structural surface. By using the corresponding boundary potential measurements and the value of applied current the both forward and inverse EIT problem were solved and method of defects detection in thin conductive film was created. This method allows calculating two-dimensional distribution of conductivity in film (conductivity map) and, indirectly, distribution of defects in it. The reconstruction defect efficiency criterion and the method of its calculation were proposed. The influence of initial data disturbance (non-uniform conductivity of the film as its roughness) on reconstruction defect efficiency without using all the combinations of current electrodes was examined.

MEMS switch with the electrostatic actuation and the resistive contact was fabricated using surface micromachining. The movable electrode of the switch was the three-layer metallic cantilever having nanoscale thickness and high lengthto- thickness ratio. Low stiffness of the cantilever allowed to approach relatively low values of the actuation voltage. The theoretical analysis and experimental study of the switching characteristics was performed.

In the paper silicon on insulator layout decomposition algorithms for the double patterning lithography on high performance computing platforms are discussed. Our approach is based on the use of a contradiction graph and a modified concurrent breadth-first search algorithm. We evaluate our technique on 45 nm Nangate Open Cell Library including non-Manhattan geometry. Experimental results show that our soft computing algorithms decompose layout successfully and a minimal distance between polygons in layout is increased.

Plasma immersion ion implantation into fins and trenches at elevated pressures is simulated. In the present work we calculate boron concentration distribution in the sample accounting for ion scattering in plasma sheath and geometric shadowing effects (ions at certain angle of incidence couldn’t achieve shadowed part of trench wall and bottom). First, energy and angle distribution of ions passed through the plasma sheath to the sample surface is obtained. These data are used to calculate boron concentration distribution in the sample. Pressure range is 30-300 mTorr, plasma electron temperature 5 eV, plasma density 10¹⁰-10¹² cm^-3. The degree of conformity increases with the pressure raises and decreases with the density of plasma.

We propose approach for modeling thin aluminum film anodization in three dimensions using variation of coupled lattice map on volumetric grid, which is capable of capturing porous and nonporous aluminum oxide growth and electrochemical polishing modes. Model derivation is based on Parkhutik and Shershulsky understandings. Numerical simulation results for various initial conditions are shown and compared to experimental data.

A role of surface processes in the developing dynamics of electrochemical reactions between silicon and fluorine containing electrolytes during the pore formation in silicon matrix, which is required for the surface and volume nanostructuring technologies, is examined. The charge exchange processes between the media via the surface were shown to be responsible for the observed anodizing regimes: stable, oscillation, and chaotic. The proposed approach enables one to explain the anodizing regime as associated with synchronized variations of the pore shapes and the global oscillation processes in the silicon/electrolyte system. On the base of computer simulation and analysis of experimental results it was shown the existence of pore formation regimes in silicon/electrolyte system which are controlled by delivery of holes to the surface. A computer model was constructed describing the formation of porous clusters in semiconductor crystals of silicon. It was shown that a special regime exists which is associated with transport of holes. It is described by the equations, which are scale-invariant with respect to the affine transformations. Porous clusters that were formed in these conditions have the property of self-similar fractal.

A general approach to derive the current-voltage characteristics both for field-effect and bipolar transistors has been proposed based on exact solution of current continuity equation in diffusion-drift approximation taking into account nonuniformity of electric field and charge density distributions between the contacts. This approach describes in a unified manner both linear and saturation parts of MOSFET’s I-V characteristics as for velocity saturation and for electrostatic pinch-off effect cases. It was shown also that the same design formula is appropriate for description of I-V characteristics in bipolar transistors.

A two dimensional model of the merged MOSFET (MMOS), a new multigate device with ambipolar conductivity, is constructed and analyzed. Two variants of the MMOS (thin and thick channel) are considered. In the first case, the distribution of potential in the channel can be calculated, and dependency of electron and hole currents on the control voltages is expressed in exponential integral functions. In the second case transcendental equations must be solved to obtain the potential in the channel volume. Equations for determining currents in simplified conditions are derived. Examples of the input, output and transfer characteristics of the MMOS are given.

Ensemble Monte-Carlo simulation of electron and hole transport in deep submicron n-channel SOI MOSFET with 100 nm channel length is performed. The influence of interband impact ionization process on the transistor characteristics is investigated within the framework of Keldysh impact ionization model. Effective threshold energy of electron impact ionization as a parameter characterizing the process is calculated. The dependence of the effective threshold energy on the drain bias is determined.

Physical-topological model of injection lasers with a functionally integrated optical radiation modulators, allowing to carry out the numerical analysis of transient processes in lasers-modulators taking into account the additional crosscontrol field and the irregular electrons, holes and photons spatial distributions was proposed. The results of numerical modeling of conventional double heterostructure lasers and functionally-integrated lasers-modulators was presented. The results of numerical modeling and the limits of applicability of the proposed model was analyzed.

The continuously increasing complexity of opto-electronic devices and the rising demands of simulation accuracy lead to the need of solving very large systems of linear equations making iterative methods promising and attractive from the computational point of view with respect to direct methods. In particular, iterative approach potentially enables the reduction of required computational time to solve Maxwell’s equations by Eigenmode Expansion algorithms. Regardless of the particular eigenmodes finding method used, the expansion coefficients are computed as a rule by scattering matrix (S-matrix) approach or similar techniques requiring order of M³ operations. In this work we consider alternatives to the S-matrix technique which are based on pure iterative or mixed direct–iterative approaches. The possibility to diminish the impact of M³ -order calculations to overall time and in some cases even to reduce the number of arithmetic operations to M² by applying iterative techniques are discussed. Numerical results are illustrated to discuss validity and potentiality of the proposed approaches.

Conducting media with the spatial dispersion may be described formally by a singly operator – an operator of a dielectric permittivity, which completely defines a microwave response of conductors with the spatial dispersion. So the eigenvalue problem for the permittivity operator of conductors and superconductors possessing a strong spatial dispersion at low temperatures is of a great importance since the corresponding solutions are the stable waves for the constitutive equation in a self-consistent microwave field. Here a wave problem is formulated to search the solutions, which correspond to the eigenvalues of a permittivity operator, similar to the relationship and the general solutions are obtained. A significant role of the spatial-type conjugated. Dispersion relationship and general solutions are obtained. A significant role of the spatial-type force resonances is considered. Conditions for the spatial resonances are derived. The obtained resonances include particular solutions corresponding to the related to a polarization, two of which correspond to waves with an amplitude increasing into the depth of a conductor, and two else describes solutions with unusual properties.

The simulation results of different devices based on carbon nanotubes (CNT) and graphene are described in the paper. The combined numerical model of hybrid integrated structures including resonant tunneling diode and field-effect transistor (RTD-FET) is proposed. Simulation of RTD-FET based on CNT of different types (chirality) was realized with the use of the developed model. The technique of express simulation of nanoradio based on CNT of the type I (based on only single CNT) and of the type II (hybrid radio) is developed. Proposed models can be used for calculation of nanoradio characteristics such as: 1) resonant frequency of CNT; 2) oscillation amplitude of СNT; 3) CNT IV-characteristics depending on different factors. Results of device simulation based on single-wall and multi-wall СNT are given in the paper. IV-characteristics of nanoscale resonant tunneling structure based on graphene-on-SiC were calculated. As well as it was investigated the influence of different parameters on the electrical characteristic of graphene-based nanostructures.

In the paper, an application of cognitive nanoinformatics to advance modeling and simulation of nanoelectronics devices is discussed. The multi-scale approach to information management for nanoelectronics devices modeling and simulation has been proposed. We illustrate our approach for two case study nanoelectronics devices.

We study the Radiation-Induced Mismatch Enhancement (RIME) in 65 nm CMOS SRAM block designed for space applications. X-ray and heavy ion irradiation increase the number of non-rewriting cells.

The paper presents an estimation technique for single event transient (SET) tolerance of combinational circuits. Technique provides means to analyze each node contribution to the overall SET tolerance of circuit. A software tool calculates critical charge of each node of circuit, process gathered data and displays it in circuit editor. The technique is technology-independent, it can be applied to nanoscale technologies.

Destructive single event gate rupture (SEGR) occurring in the gate oxides of power MOSFETs under impact of heavy ions is studied and modeled. SEGR cross section of power MOSFET with 70 nm oxide thickness as function of gate voltage was measured for four types of heavy ions. A predictive formula for the SEGR cross section is derived and validated. This formula can be used as a predictive instrument for computation of survival probability in a given spectrum of heavy ions in space environments.

It is shown that observed non-monotonic behavior of dose degradation in bipolar devices can be explained within the non-linear set of kinetic equations for the oxide trapped charge and surface recombination centers. It has been shown that proposed earlier a physical model of the Enhanced Low Dose Rate Sensitivity (ELDRS) is fully consistent with experimental temperature dependence of charge yield in thick oxides for a range of low temperatures.

This article presents the results of studies of the linear antiferromagnetic spin chain with uniaxial anisotropy (XXZ– model) placed in a transverse magnetic field directed along the anisotropy axis of the chain with a constant gradient along the chain. A spin Hamiltonian for the states close to the ground was written in the spin-wave approximation. It was diagonalized by an asymptotic expansion in the small parameter describing the magnitude of the field gradient. Local energy of the ground state and the reduced density matrix of the quantum states for a selected pair of spins in the chain have been considered in the gapped and gapless cases. Local spin polarization and the local toroidal magnetic moment have also been found. Local pair entanglement of quantum states as a characteristic of quantum correlations in the spin chain was studied.

The quantum properties of dynamic correlations in a system of an electron spin surrounded by nuclear spins under the conditions of free induction decay (FID) and spin echo have been studied. Analytical results for the time evolution of mutual information, classical part of correlations, and quantum part characterized by quantum discord have been obtained within the central spin model in the high-temperature approximation. The same formulas describe the quantum discord in both the FID and the spin echo although the forms of the dependences are different because of difference in the parameters entering into the formulas. Discord of the spin echo compared with the FID has a strong dependence on time at short times, and it tends to zero with decreasing of the magnetic field, whereas in the case of the FID it reaches a plateau.

We discuss the possibility of polarization state reconstruction and measurement over 302 km by Superconducting Single- Photon Detectors (SSPDs). Because of the excellent characteristics and the possibility to be effectively coupled to singlemode optical fiber many applications of the SSPD have already been reported. The most impressive one is the quantum key distribution (QKD) over 250 km distance. This demonstration shows further possibilities for the improvement of the characteristics of quantum-cryptographic systems such as increasing the bit rate and the quantum channel length, and decreasing the quantum bit error rate (QBER). This improvement is possible because SSPDs have the best characteristics in comparison with other single-photon detectors. We have demonstrated the possibility of polarization state reconstruction and measurement over 302.5 km with superconducting single-photon detectors. The advantage of an autocompensating optical scheme, also known as "plugandplay" for quantum key distribution, is high stability in the presence of distortions along the line. To increase the distance of quantum key distribution with this optical scheme we implement the superconducting single photon detectors (SSPD). At the 5 MHz pulse repetition frequency and the average photon number equal to 0.4 we measured a 33 bit/s quantum key generation for a 101.7 km single mode ber quantum channel. The extremely low SSPD dark count rate allowed us to keep QBER at 1.6% level.

We propose a structure and elements of the diamond chip fabrication technology, which could be used for an experimental study of spectral and dynamic properties of a quantum register prototype formed by a chain of microresonators (disks and rings) containing NV-centers. Making use of the parameters of NV-systems today exist, we simulate the dissipative population dynamics of two NV-centers located in different parts of the two-qubit register. As follows from our numerical results, high probability of controlled indirect qubit interaction via photon transfer from one center to another can be already achieved at the current diamond photonics technology level. The calculated operating parameters of the resonators and measuring structure (grating) are in good agreement with those that have been used in devices created by leading world science groups. The fabrication technique of lithographic mask is discussed and its roughness is estimated.

Three different levels of noisy quantum schemes modeling are considered: vectors, density matrices and Choi- Jamiolkowski related states. The implementations for personal computers and supercomputers are described, and the corresponding results are shown. For the level of density matrices, we present the technique of the fixed rank approximation and show some analytical estimates of the fidelity level.

The influence of amplitude and phase relaxation on evolution of quantum states within the formalism of quantum operations is considered. The model of polarizing qubits where noises are determined by the existence of spectral degree of freedom that shows up during the light propagation inside anisotropic mediums with dispersion is studied. Approximate analytic model for calculation of phase plate impact on polarizing state with dispersion influence taken into consideration is suggested.

We have developed a method for complementing an arbitrary classical dynamical system to a quantum system using the Lorenz and Rössler systems as examples. The Schrödinger equation for the corresponding quantum statistical ensemble is described in terms of the Hamilton-Jacobi formalism. We consider both the original dynamical system in the coordinate space and the conjugate dynamical system corresponding to the momentum space. Such simultaneous consideration of mutually complementary coordinate and momentum frameworks provides a deeper understanding of the nature of chaotic behavior in dynamical systems. We have shown that the new formalism provides a significant simplification of the Lyapunov exponents calculations. From the point of view of quantum optics, the Lorenz and Rössler systems correspond to three modes of a quantized electromagnetic field in a medium with cubic nonlinearity. From the computational point of view, the new formalism provides a basis for the analysis of complex dynamical systems using quantum computers.

Application of root density estimator to problems of statistical data analysis is demonstrated. Four sets of basis functions based on Chebyshev-Hermite, Laguerre, Kravchuk and Charlier polynomials are considered. The sets may be used for numerical analysis in problems of reconstructing statistical distributions by experimental data. Based on the root approach to reconstruction of statistical distributions and quantum states, we study a family of statistical distributions in which the probability density is the product of a Gaussian distribution and an even-degree polynomial. Examples of numerical modeling are given.

Finite frames have many applications in quantum informatics, communications, coding theory, and other fields. In this article we investigate their use in quantum tomography. The family of vectors comprising a frame can be used to define a protocol of quantum tomography. To do this one estimates the probabilities of projective measurements on quantum states corresponding to the frame vectors. The state under investigation can then be reconstructed by one of several quantum tomography techniques. Since quantum tomography performance depends greatly on the choice of protocol, the problem of finding an optimal protocol is of considerable interest. WeexamineafamilyofunitnormframesconsistingofnumericalsolutionstoFeketepackingproblemincomplex space. Notable members of this family are Mutually Unbiased Bases (MUBs), which were computed in all investigated prime power dimensions, as well as Symmetrical Informationally Complete Positive Operator Valued Measures(SIC-POVM) in all dimensions. This family contains other uniform tight frames, in which the number of vectors lies between that of full sets of Mutually Unbiased Bases and Symmetrical Informationally Complete POVMs, and which all share the same internal structure. We detail some properties of these frames and their performance as quantum tomography protocols.

We consider qubit modification of Jaynes-Cummings-Hubbard model with phonon environment and relaxation for exciton transport in Fenna{Matthews{Olson light-harvesting complex. We establish the view of interference picture for the subspace spanned by states of W-type (one exciton), and more general form of exciting states. We find numerically the dependence of exciton conductivity from dephasing coefficients in the case when excitations are transmitted via photons.¹

We describe an approach to quantum computer inspired by the information processing at the molecular level in living cells. It is based on the separation of a small ensemble of qubits inside the living system (e.g., a bacterial cell), such that coherent quantum states of this ensemble remain practically unchanged for a long time. We use the notion of a quantum kernel to describe such an ensemble. Quantum kernel is not strictly connected with certain particles; it permanently exchanges atoms and molecules with the environment, which makes quantum kernel a virtual notion. There are many reasons to expect that the state of quantum kernel of a living system can be treated as the stationary state of some Hamiltonian. While the quantum kernel is responsible for the stability of dynamics at the time scale of cellular life, at the longer inter-generation time scale it can change, varying smoothly in the course of biological evolution. To the first level of approximation, quantum kernel can be described in the framework of qubit modification of Jaynes-Cummings-Hubbard model, in which the relaxation corresponds to the exchange of matter between quantum kernel and the rest of the cell and is represented as Lindblad super-operators.