Impurity Phase Transitions In Silicon Emitter Junctions

Gert I. Andersson; Olof Engstrom

doi:10.1117/12.947404

16 August 1988 Impurity Phase Transitions In Silicon Emitter Junctions

Gert I. Andersson, Olof Engstrom

Proceedings Volume 0945, Advanced Processing of Semiconductor Devices II; (1988) https://doi.org/10.1117/12.947404
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States

Abstract

A new type of defect occurring in n++p+-junctions prepared by the diffusion of high concentrations of phosphorus and gallium into neutron transmutation doped (111)-silicon is reported. The defect is identified as a complex of a metal precipitate interacting with a Shockley-Read type of generation centre and has a strong influence on the recombination and generation properties of emitter structures. Instabilities in the generation current, occurring at well defined temperatures and influenced by the electric field, are interpreted as structural or phase changes among the defects. The concentration of the defects is dependent on the concentration of gallium.

Citation Download Citation

Gert I. Andersson and Olof Engstrom "Impurity Phase Transitions In Silicon Emitter Junctions", Proc. SPIE 0945, Advanced Processing of Semiconductor Devices II, (16 August 1988); https://doi.org/10.1117/12.947404

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