In-Situ MBE Regrowth of Ion Beam Etched GaAs/A1GaAs Heterostructures

A. Scherer; J. P . Harbison; D. M. Hwang; E. D . Beebe

doi:10.1117/12.947390

16 August 1988 In-Situ MBE Regrowth of Ion Beam Etched GaAs/A1GaAs Heterostructures

A. Scherer, J. P . Harbison, D. M. Hwang, E. D . Beebe

Proceedings Volume 0945, Advanced Processing of Semiconductor Devices II; (1988) https://doi.org/10.1117/12.947390
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States

Abstract

We report for the first time the use of ion beam assisted etching in the lOad-lock of a molecular beam epitaxy (MBE) chamber for in-situ patterning and regrowth of GaAs/AlGaAs microstructures. Microstructural analysis with electron microscopy indicates that the quality of the overgrowth improves dramatically as the substrate temperature for regrowth is raised from 580 C to 680 C. Using ion beam assisted etching in conjunction with fluoride masks compatible both with the electron beam lithography process and the need for low reactivity with GaAs at elevated growth temperatures, epitaxical single-crystal AlGaAs layers have been regrown on sub-micron structures.

Citation Download Citation

A. Scherer, J. P . Harbison, D. M. Hwang, and E. D . Beebe "In-Situ MBE Regrowth of Ion Beam Etched GaAs/A1GaAs Heterostructures", Proc. SPIE 0945, Advanced Processing of Semiconductor Devices II, (16 August 1988); https://doi.org/10.1117/12.947390

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