Effects of AlSb interfaces on InAs/InAsSb type-II infrared superlattice material properties

Elizabeth H. Steenbergen; Zhiyuan Lin; Said Elhamri; William C Mitchel; Yong-Hang Zhang; Ron Kaspi

doi:10.1117/12.2177696

4 June 2015 Effects of AlSb interfaces on InAs/InAsSb type-II infrared superlattice material properties

Elizabeth H. Steenbergen, Zhiyuan Lin, Said Elhamri, William C Mitchel, Yong-Hang Zhang, Ron Kaspi

Proceedings Volume 9451, Infrared Technology and Applications XLI; 945114 (2015) https://doi.org/10.1117/12.2177696
Event: SPIE Defense + Security, 2015, Baltimore, MD, United States

Abstract

Significant attention has recently been given to photoluminescence (PL) spectra and lifetime measurements on InAs/InAsSb superlattices, as high quality optical material with long carrier lifetimes are required for infrared detectors. The standard sample structure for PL measurements includes energy barriers to block photo-generated carriers from being lost through non-radiative recombination at interfaces between the superlattice and the surface or between the superlattice and the buffer/substrate. However, defect, surface, and/or interface states in AlSb, a commonly used barrier material, are known to contribute carriers to InAs quantum wells. Due to the similarity of the AlSb interface with the InAs/InAsSb superlattice, the effects of the barriers on the electrical and optical properties of the superlattice were investigated. Structures with AlSb barriers at the top and bottom of the superlattice, with no AlSb barriers, and with an AlSb barrier only at the top of the superlattice structure were studied. Hall Effect measurements revealed little change in the sheet carrier concentration at 10 K due to the barriers, but significant increases in low temperature mobility and a two-dimensional-like mobility temperature dependence were observed when barriers were present. Further high magnetic field measurements are necessary, however, to understand the transport properties of these samples due to the likelihood that multiple carriers are present. The photoluminescence (PL) spectra were almost identical regardless of the barriers, except for a 15% increase in intensity with the AlSb barrier between the buffer layer and the superlattice. The surface AlSb barrier had little effect on the intensity. The barriers are therefore recommended for PL measurements to increase the signal intensity; however, they complicate the analysis of single-field Hall Effect measurements.

Citation Download Citation

Elizabeth H. Steenbergen, Zhiyuan Lin, Said Elhamri, William C Mitchel, Yong-Hang Zhang, and Ron Kaspi "Effects of AlSb interfaces on InAs/InAsSb type-II infrared superlattice material properties", Proc. SPIE 9451, Infrared Technology and Applications XLI, 945114 (4 June 2015); https://doi.org/10.1117/12.2177696

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available