Numerical analysis of CdS/PbSe room temperature mid-infrared heterojunction photovoltaic detectors

Binbin Weng; Jijun Qiu; Wanyin Ge; Zhisheng Shi

doi:10.1117/12.2175813

4 June 2015 Numerical analysis of CdS/PbSe room temperature mid-infrared heterojunction photovoltaic detectors

Binbin Weng, Jijun Qiu, Wanyin Ge, Zhisheng Shi

Proceedings Volume 9451, Infrared Technology and Applications XLI; 945116 (2015) https://doi.org/10.1117/12.2175813
Event: SPIE Defense + Security, 2015, Baltimore, MD, United States

Abstract

Numerical analysis of a CdS/PbSe room-temperature heterojunction photovoltaic detector is discussed as to provide guidelines for practical improvement, based on the previous experimental exploration [1]. In our experiment work, the polycrystalline CdS film was prepared in hydro-chemical method on top of the single crystalline PbSe grown by molecular beam epitaxy method. The preliminary results demonstrated a 5.48×10⁸ Jones peak detectivity at λ=4.7μm under zero-bias. However, the influence of some material and device parameters such as carrier concentration, interface recombination velocity remains uncertain. These parameters affect the built-in electric field and the carriers’ transportation properties, and consequently could have detrimental effect on the device performance of the CdS/PbSe detector. In this work, therefore, the numerical analysis is performed based on these parameters. The simulation results suggest that the device performance can be improved at least 4 times by increasing CdS concentration for two orders of magnitudes, and the device performance will degrade severely if the interface recombination speed is over 10⁴ cm/s.

Citation Download Citation

Binbin Weng, Jijun Qiu, Wanyin Ge, and Zhisheng Shi "Numerical analysis of CdS/PbSe room temperature mid-infrared heterojunction photovoltaic detectors", Proc. SPIE 9451, Infrared Technology and Applications XLI, 945116 (4 June 2015); https://doi.org/10.1117/12.2175813

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