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4 June 2015 Resonator-QWIP FPA development
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Previously, we adopted the resonator-QWIPs and increased the FPA QE to 30 − 40%. In this work, we performed a systematic theoretical analysis on the potential performance based on this new detector structure. In this analysis, the doping density and the number of quantum wells are varied to obtain different detector characteristics. For 25 μm pixel pitch, 10 Me integrated charge, and F/2 optics, the analysis shows that a 9.2 μm cutoff R-QWIP optimized for high temperature operation could provide 20 mK NEΔT at τint = 2.6 ms when operating at T = 80 K. An R-QWIP with a 10.2 μm cutoff could achieve the same with τint = 1.3 ms at T = 74 K. Similar NEΔT can also be achieved with smaller pixel pitch down to 6 μm for both cutoffs with a more relaxed operating condition where the f-number is 1, τint is 5 ms, and T is 70 K. We provide preliminary test detector data to support this analysis.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. K. Choi, J. Sun, and K. Olver "Resonator-QWIP FPA development", Proc. SPIE 9451, Infrared Technology and Applications XLI, 94512K (4 June 2015);


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