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9 August 1988 Photoreflectance And Thermoreflectance Of A GaAs/Ga0.82Al0.18As Multiple Quantum Well: Mechanisms of Electromodulation
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Proceedings Volume 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III; (1988) https://doi.org/10.1117/12.947410
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
From a comparison of the thermoreflectance (first-derivative spectroscopy) and photoreflectance [electromodulation (EM)] spectra at 300K and 77K from a GaAs/Ga0.82A10.18As multiple quantum well structure we have obtained important information about the mechanisms of gm for uncoupled and coupled states. At 300K EM produces a third-derivative lineshape for the latter due to low-field modulation of tunneling states, while for the former a first-derivative is observed, related to modulation of exciton transitions. At 77K both coupled and uncoupled states yield a first-derivative lineshape due to these excitonic effects.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. Shen, S. H. Pan, Fred H. Pollak, and R. N. Sacks "Photoreflectance And Thermoreflectance Of A GaAs/Ga0.82Al0.18As Multiple Quantum Well: Mechanisms of Electromodulation", Proc. SPIE 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III, (9 August 1988); https://doi.org/10.1117/12.947410
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