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9 August 1988 Raman Characterization Of Semiconductor Superlattices
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Proceedings Volume 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III; (1988) https://doi.org/10.1117/12.947422
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
Raman scattering is a useful and non-destructive tool for characterization of semiconductor multilayered structures. This review paper is focused on the determination of the structure and composition as well as the optical, acoustical and acousto-optical properties of superlattices (or multiquantum wells). Most of the experimental results presented here concern the GaAs/AlAs superlattice system and are based on light scattering by folded acoustic modes and quantized optical modes. The Raman investigation of other superlattice systems (GaSb/ AlSb, GeSi/SisxGel-x etc...) as well as the scattering by interface modes are briefly reviewed. In certain application it is necesssary to locally destroy the multiquantum well structure in order to obtain optical and electrical confinements. The intentionally induced disordering can be also analyzed by Raman scattering.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Sapriel "Raman Characterization Of Semiconductor Superlattices", Proc. SPIE 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III, (9 August 1988); https://doi.org/10.1117/12.947422
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