Study Of Thin Epitaxial Film Formation By Germanium Segregation In Silicon Oxidation

S. M. Prokes; O. J. Glembocki; E. P. Donovan; R. Stahlbush; W. E. Carlos; H. Dietrich; A. Christou

doi:10.1117/12.947432

9 August 1988 Study Of Thin Epitaxial Film Formation By Germanium Segregation In Silicon Oxidation

S. M. Prokes, O. J. Glembocki, E. P. Donovan, R. Stahlbush, W. E. Carlos, H. Dietrich, A. Christou

Proceedings Volume 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III; (1988) https://doi.org/10.1117/12.947432
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States

Abstract

Thin germanium-rich layers have been formed by the implantation of Ge into Si substrates, followed by a wet oxidation process. We have measured the germanium concentration profile of layers formed by this method for samples initially implanted to a dose of 1 x 10¹⁷cm^-2. Structural, optical, and electronic probes have been used, all of which yield similar results. The results from Ruth-erford backscattering (RBS), Auger spectroscopy (AES), Raman spectroscopy, and electroreflectance (ER) show that the germanium-rich layer is about 300A thick, and contains an average germanium concentration of 65%. The SiGe/Si interface is not sharp but diffuse, with a decreasing germanium concentration. In addition, the data suggest a thin layer of Si₁₃Ge₈₇ near the Si0₂/SiGe interface.

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S. M. Prokes, O. J. Glembocki, E. P. Donovan, R. Stahlbush, W. E. Carlos, H. Dietrich, and A. Christou "Study Of Thin Epitaxial Film Formation By Germanium Segregation In Silicon Oxidation", Proc. SPIE 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III, (9 August 1988); https://doi.org/10.1117/12.947432

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