THz devices based on 2D electron systems

Huili Grace Xing; Rusen Yan; Bo Song; Jimy Encomendero; Debdeep Jena

doi:10.1117/12.2185117

28 May 2015 THz devices based on 2D electron systems

Huili Grace Xing, Rusen Yan, Bo Song, Jimy Encomendero, Debdeep Jena

Proceedings Volume 9476, Automatic Target Recognition XXV; 94760Q (2015) https://doi.org/10.1117/12.2185117
Event: SPIE Defense + Security, 2015, Baltimore, MD, United States

Abstract

In two-dimensional electron systems with mobility on the order of 1,000 – 10,000 cm²/Vs, the electron scattering time is about 1 ps. For the THz window of 0.3 – 3 THz, the THz photon energy is in the neighborhood of 1 meV, substantially smaller than the optical phonon energy of solids where these 2D electron systems resides. These properties make the 2D electron systems interesting as a platform to realize THz devices. In this paper, I will review 3 approaches investigated in the past few years in my group toward THz devices. The first approach is the conventional high electron mobility transistor based on GaN toward THz amplifiers. The second approach is to employ the tunable intraband absorption in 2D electron systems to realize THz modulators, where I will use graphene as a model material system. The third approach is to exploit plasma wave in these 2D electron systems that can be coupled with a negative differential conductance element for THz amplifiers/sources/detectors.

Citation Download Citation

Huili Grace Xing, Rusen Yan, Bo Song, Jimy Encomendero, and Debdeep Jena "THz devices based on 2D electron systems", Proc. SPIE 9476, Automatic Target Recognition XXV, 94760Q (28 May 2015); https://doi.org/10.1117/12.2185117

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