Determination of stress in silicon wafers using Raman spectroscopy

M. De Biasio; L. Neumaier; N. Vollert; E. Geier; M. Roesner; Ch. Hirschl; M. Kraft

doi:10.1117/12.2176994

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3 June 2015 Determination of stress in silicon wafers using Raman spectroscopy

M. De Biasio, L. Neumaier, N. Vollert, E. Geier, M. Roesner, Ch. Hirschl, M. Kraft

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Proceedings Volume 9482, Next-Generation Spectroscopic Technologies VIII; 94820R (2015) https://doi.org/10.1117/12.2176994
Event: SPIE Sensing Technology + Applications, 2015, Baltimore, Maryland, United States

Abstract

With a strong industrial trend towards using thin silicon in semiconductor devices, process legacy-induced stresses are matter of increasing practical importance. A key problem here is a lack of suitable metrology equipment for measuring inherent substrate material stresses in the manufacturing line. To overcome this, the use of Raman microspectrometry as a tool for measuring stress levels and distributions quantitatively on entire productive wafers was researched. Combining model cases, theoretical considerations and real-world samples, it could be shown that Raman can provide the necessary analytical accuracy and reliability, allowing to relate ensuing stress states e.g. to different wafer thinning process parameters.

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M. De Biasio, L. Neumaier, N. Vollert, E. Geier, M. Roesner, Ch. Hirschl, and M. Kraft "Determination of stress in silicon wafers using Raman spectroscopy", Proc. SPIE 9482, Next-Generation Spectroscopic Technologies VIII, 94820R (3 June 2015); https://doi.org/10.1117/12.2176994

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