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12 May 2015 AlGaInN laser diode bar and array technology for high power and individually addressable applications
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Abstract
The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible ~530nm, by tuning the indium content of the laser GaInN quantum well. Low defectivity and high uniformity GaN substrates allows arrays and bars of AlGaInN lasers with up to 20 emitters to be fabricated to obtain optical powers up to 4W at 395nm. AlGaInN laser bars are suitable for optical pumps and novel extended cavity systems for a wide range of applications. An alternative package configuration for AlGaInN laser arrays allows for each individual laser to be addressed individually allowing complex free-space and/or fibre optic system integration with a very small form-factor.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Stephen P. Najda, Piotr Perlin, Tadek Suski, Lucja Marona, Mike Boćkowski, Mike Leszczyński, Przemek Wisniewski, Robert Czernecki, Robert Kucharski, and Grzegorz Targowski "AlGaInN laser diode bar and array technology for high power and individually addressable applications", Proc. SPIE 9513, High-Power, High-Energy, and High-Intensity Laser Technology II, 95130G (12 May 2015); https://doi.org/10.1117/12.2081358
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