The effect of sensor temperature and MOx layer thickness on the sensitivity of SnO2- and WO3-based chemiresistive sensors to ethylene gas

Matic Krivec; Raimund Leitner; Roland Waldner; Johanna Gostner; Florian Überall

doi:10.1117/12.2179235

21 May 2015 The effect of sensor temperature and MOx layer thickness on the sensitivity of SnO₂- and WO₃-based chemiresistive sensors to ethylene gas

Matic Krivec, Raimund Leitner, Roland Waldner, Johanna Gostner, Florian Überall

Author Affiliations +

Proceedings Volume 9517, Smart Sensors, Actuators, and MEMS VII; and Cyber Physical Systems; 951713 (2015) https://doi.org/10.1117/12.2179235
Event: SPIE Microtechnologies, 2015, Barcelona, Spain

Abstract

Two types of MOx sensor structures, SnO₂ and WO₃, of different thicknesses were synthesized on top of the interdigitated Au electrodes and used for the measurements of the ethylene gas. The SEM micrographs revealed inhomogeneities of the WO₃ layer and the presence of cracks on the edges of Au electrodes which correlates with the lack of reproducibility of the WO₃ sensors. Both sensor structures showed a significant sensitivity to ethylene gas: the sensitivities of both MOx-types were higher at higher temperatures which was more evident in the case of SnO₂ structure. The SnO₂ layer had approximately 5-times higher sensitivity than the WO₃ sensor of the same thickness. The saturation (T10) and desaturation (T90) times were shorter for WO₃ sensors at lower temperatures while SnO₂ was saturated and desaturated faster at higher temperatures. Sensors with thinner active layer possessed higher sensitivities and shorter T10 and T90 times.

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Matic Krivec, Raimund Leitner, Roland Waldner, Johanna Gostner, and Florian Überall "The effect of sensor temperature and MOx layer thickness on the sensitivity of SnO₂- and WO₃-based chemiresistive sensors to ethylene gas", Proc. SPIE 9517, Smart Sensors, Actuators, and MEMS VII; and Cyber Physical Systems, 951713 (21 May 2015); https://doi.org/10.1117/12.2179235

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