Luminescence yield in Al and Tb3+ delta-doped oxide thin films fabricated by electron beam evaporation

O. Blázquez; J. M. Ramírez; J. López-Vidrier; Y. Berencén; S. Hernández; P. Sanchis; B. Garrido

doi:10.1117/12.2178855

1 June 2015 Luminescence yield in Al and Tb³⁺delta-doped oxide thin films fabricated by electron beam evaporation

O. Blázquez, J. M. Ramírez, J. López-Vidrier, Y. Berencén, S. Hernández, P. Sanchis, B. Garrido

Proceedings Volume 9520, Integrated Photonics: Materials, Devices, and Applications III; 95200K (2015) https://doi.org/10.1117/12.2178855
Event: SPIE Microtechnologies, 2015, Barcelona, Spain

Abstract

Electron beam evaporation was employed in order to fabricate Al- and Tb-codoped Si oxide multilayers via the delta-doping approach. This methodology permits the control of the rare-earth (RE) separation along the growth direction with nanometric resolution. To investigate the control of the RE separation in the growth direction, different SiO₂ thicknesses were studied. After deposition, the samples were submitted to different annealing processes for 1 h in N², at temperatures ranging from 700 to 1100 °C. Photoluminescence experiments reveal narrow emissions ascribed to Tb³⁺ ions in all samples, with an intensity variation depending on the oxide thickness and annealing temperature. In addition, the incorporation of Al under different spatial configurations produced an enhancement of more than one order of magnitude in the photoluminescence intensity, in respect to the best sample without Al. Finally, time-resolved measurements were carried out in order to determine the ⁵D₄→⁷F₅ transition dynamics, obtaining a decay time of ~1.6 ms ascribed to the Tb³⁺ ions.

Citation Download Citation

O. Blázquez, J. M. Ramírez, J. López-Vidrier, Y. Berencén, S. Hernández, P. Sanchis, and B. Garrido "Luminescence yield in Al and Tb³⁺delta-doped oxide thin films fabricated by electron beam evaporation", Proc. SPIE 9520, Integrated Photonics: Materials, Devices, and Applications III, 95200K (1 June 2015); https://doi.org/10.1117/12.2178855

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available