You have requested a machine translation of selected content from our databases. This functionality is provided solely for your convenience and is in no way intended to replace human translation. Neither SPIE nor the owners and publishers of the content make, and they explicitly disclaim, any express or implied representations or warranties of any kind, including, without limitation, representations and warranties as to the functionality of the translation feature or the accuracy or completeness of the translations.
Translations are not retained in our system. Your use of this feature and the translations is subject to all use restrictions contained in the Terms and Conditions of Use of the SPIE website.
4 March 2015Temperature characteristic of 808nm VCSELs with large aperture
In order to study the output characteristics of 808nm vertical cavity surface emitting laser(VCSEL) with large aperture at different temperature, 808nm VCSEL with 500μm emitting diameter are fabricated with Reticular Electrode Structure(RES). Lasing wavelength, optical power and the threshold current are measured by changing the temperature of heat sink. And an output power of 0.42W is achieved at 1.3A at room temperature under continuous wave operation. The central wavelength is 803.32nm, and the full width at half maximum is 0.16nm, the temperature shift is 0.06nm/℃, the thermal resistance is 0.098℃/mW. The testing results show that 808nm VCSEL with large aperture is good temperature characteristic.
The alert did not successfully save. Please try again later.
Yuan Feng, Dawei Feng, Yongqin Hao, Yong Wang, Changling Yan, Peng Lu, Yang Li, "Temperature characteristic of 808nm VCSELs with large aperture," Proc. SPIE 9521, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part I, 95210L (4 March 2015); https://doi.org/10.1117/12.2087562