Study on the relationship of dark current characteristics and materials surface defects of extended wavelength InGaAs photodiodes

Hongzhou Yan; Hengjing Tang; Shuangyan Deng; Gang Chen; Xiumei Shao; Tao Li; Xue Li; Haimei Gong

doi:10.1117/12.2180244

13 April 2015 Study on the relationship of dark current characteristics and materials surface defects of extended wavelength InGaAs photodiodes

Hongzhou Yan, Hengjing Tang, Shuangyan Deng, Gang Chen, Xiumei Shao, Tao Li, Xue Li, Haimei Gong

Author Affiliations +

Proceedings Volume 9522, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part II; 95221X (2015) https://doi.org/10.1117/12.2180244
Event: Selected Proceedings of the Photoelectronic Technology Committee Conferences held August-October 2014, 2014, China, China

Abstract

Extended wavelength InGaAs photodiodes in 1.0~2.5μm spectral rang based on two types of material structures were investigated systematically. The first type InGaAs photodiode, marked by sample 1#, was fabricated using MOCVD epitaxial materials with P-i-N structure. The second type InGaAs photodiodes, marked by sample 2#, was fabricated using MBE epitaxial materials with P-i-N structure. The two types of photodiodes were fabricated by mesa etching technique, side-wall and surface passivation film. Dark current and voltage curves were measured by semiconductor parameters analyzer at different temperature, and dark current characteristics were analyzed using different perimeter to area method. The mechanism of the devices has been analysed. Polarization microscopy and conductive atomic force microscopy (c-AFM) have been used to investigate the local conductivity of the photodiodes’ sensitive area. Combining the optical and c-AFM micrographs with dark current characteristics, we intended to characterize the relationships of the leak current and the defect. The results indicate that sample 1# has relative much more leak defects than that of sample 2#, and thus the dark current sample 1# is higher than that of sample 2# and. The defects are generated at the body of material and spread to the surface, and these defects cause very high dark current of sample 1#.

Citation Download Citation

Hongzhou Yan, Hengjing Tang, Shuangyan Deng, Gang Chen, Xiumei Shao, Tao Li, Xue Li, and Haimei Gong "Study on the relationship of dark current characteristics and materials surface defects of extended wavelength InGaAs photodiodes", Proc. SPIE 9522, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part II, 95221X (13 April 2015); https://doi.org/10.1117/12.2180244

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available